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	Modeling and Analysis of a New Pressure Contact Package for High-Current Large-Die IGBTs
	Zeng, Z; Wang, J; Li, F; Yin, X; Shen, ZJ
刊名	IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS
	2019
卷号	Vol.7 No.3页码:1615-1626
关键词	Finite-element (FE) analysis insulated gate bipolar transistor (IGBT) large die pressure contact package
ISSN号	2168-6777
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4750376
专题	湖南大学
作者单位	1.Hunan Univ, Coll Elect & Informat Engn, Changsha 410082, Hunan, Peoples R China 2.IIT, Dept Elect & Comp Engn, Chicago, IL 60616 USA
推荐引用方式 GB/T 7714	Zeng, Z,Wang, J,Li, F,et al. Modeling and Analysis of a New Pressure Contact Package for High-Current Large-Die IGBTs[J]. IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS,2019,Vol.7 No.3:1615-1626.
APA	Zeng, Z,Wang, J,Li, F,Yin, X,&Shen, ZJ.(2019).Modeling and Analysis of a New Pressure Contact Package for High-Current Large-Die IGBTs.IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS,Vol.7 No.3,1615-1626.
MLA	Zeng, Z,et al."Modeling and Analysis of a New Pressure Contact Package for High-Current Large-Die IGBTs".IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS Vol.7 No.3(2019):1615-1626.

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