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	An Improved Proportional Base Driver for Minimizing Driver Power Consumption of SiC BJT Over Wide Current and Temperature Range
	Liang, SW; Wang, J; Deng, LF; Shi, YZ; Yin, X; Shen, ZJ
刊名	IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS
	2019
卷号	Vol.7 No.3页码:1727-1735
关键词	4H-SiC bipolar junction transistor (BJT) boost converter driver loss gate driver
ISSN号	2168-6777
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4750381
专题	湖南大学
作者单位	1.Hunan Univ, Coll Elect & Informat Engn, Changsha 410082, Hunan, Peoples R China 2.IIT, Chicago, IL 60616 USA
推荐引用方式 GB/T 7714	Liang, SW,Wang, J,Deng, LF,et al. An Improved Proportional Base Driver for Minimizing Driver Power Consumption of SiC BJT Over Wide Current and Temperature Range[J]. IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS,2019,Vol.7 No.3:1727-1735.
APA	Liang, SW,Wang, J,Deng, LF,Shi, YZ,Yin, X,&Shen, ZJ.(2019).An Improved Proportional Base Driver for Minimizing Driver Power Consumption of SiC BJT Over Wide Current and Temperature Range.IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS,Vol.7 No.3,1727-1735.
MLA	Liang, SW,et al."An Improved Proportional Base Driver for Minimizing Driver Power Consumption of SiC BJT Over Wide Current and Temperature Range".IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS Vol.7 No.3(2019):1727-1735.

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