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A Novel Silicon Carbide Accumulation Channel Injection Enhanced Gate Transistor With Buried Barrier Under Shielding Region 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017, 卷号: 38, 期号: 7, 页码: 941-944
作者:  Zhengxin Wen;  Feng Zhang;  Member;  IEEE;  Zhanwei Shen
收藏  |  浏览/下载：36/0  |  提交时间：2018/06/01
Spin transport and accumulation in the persistent photoconductor Al0.3Ga0.7As 期刊论文
applied physics letters, 2013, 卷号: 102, 期号: 15, 页码: 152408
Misuraca, Jennife; Kim, Joon-Il; Lu, Jun; Meng, Kangkang; Chen, Lin; Yu, Xuezhe; Zhao, Jianhua; Xiong, Peng; von Molnar, Stephan
收藏  |  浏览/下载：43/0  |  提交时间：2013/08/27
Low-Temperature Performance of Accumulation-Mode p-Channel Wrap-Gated FinFETs 期刊论文
journal of nanoscience and nanotechnology, 2013, 卷号: 13, 期号: 2, 页码: 804-807
Zhang, Yanbo; Du, Yandong; Chen, Yankun; Li, Xiaoming; Yang, Xiang; Han, Weihua; Yang, Fuhua
收藏  |  浏览/下载：25/0  |  提交时间：2013/10/08
Generating and reversing spin accumulation by temperature gradient in a quantum dot attached to ferromagnetic leads 期刊论文
chinese physics b, 2012, 卷号: 21, 期号: 7, 页码: 077301
Bai, Xu-Fang; Chi, Feng; Zheng, Jun; Li, Yi-Nan
收藏  |  浏览/下载：12/0  |  提交时间：2013/05/07
Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers 期刊论文
Acta physica sinica, 2011, 卷号: 60, 期号: 5, 页码: 6
作者:  Tang Hai-Ma;  Zheng Zhong-Shan;  Zhang En-Xia;  Yu Fang;  Li Ning
收藏  |  浏览/下载：24/0  |  提交时间：2019/05/12
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:  Song HP;  Wei HY;  Li CM;  Jiao CM
收藏  |  浏览/下载：66/4  |  提交时间：2011/07/05
Formation of silicon nanocrystals embedded in high-kappa dielectric HfO2 and their application for charge storage 期刊论文
journal of vacuum science & technology b, 2011, 卷号: 29, 期号: 2, 页码: article no.21018
Li WL; Jia R; Chen C; Li HF; Liu XY; Yue HH; Ding WC; Ye TC; Kasai S; Hashizume T; Wu NJ; Xu BS
收藏  |  浏览/下载：38/2  |  提交时间：2011/07/05
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 39-42
作者:  Song HP;  Shi K;  Sang L;  Wei HY
收藏  |  浏览/下载：58/3  |  提交时间：2011/07/05
Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers 期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 5, 页码: article no.56104
作者:  Yu F
收藏  |  浏览/下载：93/6  |  提交时间：2011/07/06
Drive current of accumulation-mode p-channel SOI-based wrap-gated Fin-FETs 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 9, 页码: 94001
Zhang, Yanbo; Du, Yandong; Xiong, Ying; Yang, Xiang; Han, Weihua; Yang, Fuhua,
收藏  |  浏览/下载：12/0  |  提交时间：2012/06/14

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