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Raman study of ultrathin Fe(3)O(4) films on GaAs(001) substrate: stoichiometry, epitaxial orientation and strain 期刊论文
journal of raman spectroscopy, 2011, 卷号: 42, 期号: 6, 页码: 1388-1391
Zhang, J; Tan, PH; Zhao, WJ; Lu, J; Zhao, JH
收藏  |  浏览/下载：22/0  |  提交时间：2012/01/06
Valley-Dependent Brewster Angles and Goos-Hanchen Effect in Strained Graphene 期刊论文
physical review letters, 2011, 卷号: 106, 期号: 17, 页码: article no.176802
作者:  Wu ZH
收藏  |  浏览/下载：50/3  |  提交时间：2011/07/05
Strained and strain-relaxed epitaxial Ge(1-x)Sn(x) alloys on Si(100) substrates 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: 68103
Wang, W; Su, SJ; Zheng, J; Zhang, GZ; Zuo, YH; Cheng, BW; Wang, QM
收藏  |  浏览/下载：18/0  |  提交时间：2012/02/06
The contributions of composition and strain to the phonon shift in Ge1-xSnx alloys 期刊论文
solid state communications, 2011, 卷号: 151, 期号: 8, 页码: 647-650
Su SJ; Wang W; Cheng BW; Hu WX; Zhang GZ; Xue CL; Zuo YH; Wang QM
收藏  |  浏览/下载：64/3  |  提交时间：2011/07/05
Comparison of as-grown and annealed GaN/InGaN:Mg samples 期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 34, 页码: 345101
Deng QW; Wang XL; Xiao HL; Wang CM; Yin HB; Chen H; Lin DF; Jiang LJ; Feng C; Li JM; Wang ZG; Hou X
收藏  |  浏览/下载：18/0  |  提交时间：2012/01/06
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Pan X
收藏  |  浏览/下载：20/0  |  提交时间：2011/09/14
Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1) 期刊论文
materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 97-100
Wei, M; Wang, XL; Pan, X; Xiao, HL; Wang, CM; Hou, QF; Wang, ZG
收藏  |  浏览/下载：26/0  |  提交时间：2012/01/06
Magnetic barrier on strained graphene: A possible valley filter 期刊论文
physical review b, 2010, 卷号: 82, 期号: 11, 页码: art. no. 115442
Zhai F (Zhai Feng); Zhao XF (Zhao Xiaofang); Chang K (Chang Kai); Xu HQ (Xu H. Q.)
收藏  |  浏览/下载：20/0  |  提交时间：2010/11/02
Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 3, 页码: art. no. 038504
Zhu B (Zhu Bin); Han Q (Han Qin); Yang XH (Yang Xiao-Hong); Ni HQ (Ni Hai-Qiao); He JF (He Ji-Fang); Niu ZC (Niu Zhi-Chuan); Wang X (Wang Xin); Wang XP (Wang Xiu-Ping); Wang J (Wang Jie)
收藏  |  浏览/下载：124/5  |  提交时间：2010/04/22
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801
Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Chen GF (Chen Gui-Feng); Zhang SM (Zhang Shu-Ming); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhao DG (Zhao De-Gang); Wang H (Wang Hui); Wang YT (Wang Yu-Tian); Yang H (Yang Hui)
收藏  |  浏览/下载：127/4  |  提交时间：2010/04/13

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