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CORC

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An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application 期刊论文
solid-state electronics, 2009, 卷号: 53, 期号: 3, 页码: 332-335
作者:  Zhang ML;  Hou QF
收藏  |  浏览/下载：129/30  |  提交时间：2010/03/08
Monolithic integration of sampled grating DBR with electroabsorption modulator by combining selective-area-growth MOCVD and quantum-well intermixing 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 10, 页码: 3670-3672
Liu, HB; Zhao, LJ; Pan, JQ; Zhu, HL; Zhou, F; Wang, BJ; Wang, W
收藏  |  浏览/下载：19/0  |  提交时间：2010/03/08
1-mm gate periphery algan/ain/gan hemts on sic with output power of 9.39 w at 8 ghz 期刊论文
Solid-state electronics, 2007, 卷号: 51, 期号: 3, 页码: 428-432
作者:  Wang, X. L.;  Cheng, T. S.;  Ma, Z. Y.;  Hu, Gx;  Xiao, H. L.
收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12
Algan/aln/gan/sic hemt structure with high mobility gan thin layer as channel grown by mocvd 期刊论文
Journal of crystal growth, 2007, 卷号: 298, 页码: 835-839
作者:  Wang, Xiaoliang;  Hu, Guoxin;  Ma, Zhiyong;  Ran, Junxue;  Wang, Cuimei
收藏  |  浏览/下载：22/0  |  提交时间：2019/05/12
AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD 期刊论文
journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 835-839
Wang XL (Wang Xiaoliang); Hu GX (Hu Guoxin); Ma ZY (Ma Zhiyong); Ran JX (Ran Junxue); Wang CM (Wang Cuimei); Mao HL (Mao Hongling); Tang H (Tang Han); Li HP (Li Hanping); Wang JX (Wang Junxi); Zeng YP (Zeng Yiping); Jinmin LM (Li Jinmin); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载：37/0  |  提交时间：2010/03/29
2DEG  
1-mm gate periphery AlGaN/AIN/GaN HEMTs on SiC with output power of 9.39 W at 8 GHz 期刊论文
solid-state electronics, 2007, 卷号: 51, 期号: 3, 页码: 428-432
Wang XL; Cheng TS; Ma ZY; Hu G; Xiao HL; Ran JX; Wang CM; Luo WJ
收藏  |  浏览/下载：95/0  |  提交时间：2010/03/29
Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition 期刊论文
thin solid films, 2006, 卷号: 497, 期号: 1-2, 页码: 157-162
Ai B; Shen H; Liang ZC; Chen Z; Kong GL; Liao XB
收藏  |  浏览/下载：48/0  |  提交时间：2010/04/11
Growth and characterization of 0.8-mu m gate length AlGaN/GaN HEMTs on sapphire substrates 期刊论文
science in china series f-information sciences, 2005, 卷号: 48, 期号: 6, 页码: 808-814
Wang XL; Wang CM; Hu GX; Wang JX; Ran JX; Fang CB; Li JP; Zeng YP; Li JM; Liu XY; Liu J; Qian H
收藏  |  浏览/下载：326/7  |  提交时间：2010/04/11
Realization of GaAs/AlGaAs quantum-cascade lasers with high average optical power 期刊论文
solid-state electronics, 2005, 卷号: 49, 期号: 12, 页码: 1961-1964
Liu JQ; Liu FQ; Lu XZ; Guo Y; Wang ZG
收藏  |  浏览/下载：300/3  |  提交时间：2010/04/11
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells 会议论文
international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003
作者:  Zhang YH;  Jiang DS
收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15

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