×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
安徽大学 [15]
内容类型
期刊论文 [15]
发表日期
2019 [2]
2018 [3]
2017 [3]
2014 [3]
2013 [2]
2012 [1]
更多...
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共15条,第1-10条
帮助
限定条件
专题:安徽大学
第一署名单位
第一作者单位
通讯作者单位
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
Atomic-layer-deposited AlO passivation dependent interface chemistry, band alignment and electrical properties of HfYO/Si gate stacks
期刊论文
Journal of Materials Science & Technology, 2019, 卷号: Vol.35 No.5, 页码: 769-776
作者:
Die Wang
;
Shuang Liang
;
Fen Qiao
;
Gang He
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2019/04/24
AlOpassivation
layer
Co-sputtering
HYO
films
Annealing
Electrical
properties
Conduction
mechanism
Phosphate coatings evolution study and effects of ultrasonic on soft magnetic properties of FeSiAl by aqueous phosphoric acid solution passivation
期刊论文
Journal of Alloys and Compounds, 2019, 卷号: Vol.783, 页码: 434-440
作者:
Ruiwei Zhu
;
Zhen Wang
;
Mudssir Shezad
;
Xucai Kan
;
Wei Yang
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/04/24
FeSiAl
Soft
magnetic
composites
Phosphoric
acid
passivation
Ultrasound
Magnetic
properties
Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD‐Derived Al2O3 Passivation Layer and Forming Gas Annealing
期刊论文
Advanced Electronic Materials, 2018, 卷号: Vol.4 No.4
作者:
Wendong Li
;
Shuang Liang
;
Li Zhu
;
Mao Liu
;
Mingliang Tian
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2019/04/22
electrical
properties
forming
gas
annealing
high‐k
gate
dielectrics
interface
chemistry
metal‐oxide‐semiconductor
capacitors
Atomic-layer-deposited AlO passivation dependent interface chemistry, band alignment and electrical properties of HfYO/Si gate stacks
期刊论文
Journal of Materials Science & Technology, 2018
作者:
Die Wang
;
Shuang Liang
;
Fen Qiao
;
Gang He
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/04/24
AlOpassivation
layer
Co-sputtering
HYO
films
Annealing
Electrical
properties
Conduction
mechanism
Synthesis and Characterization of Bi2S3 Quantum Dot–Sensitized TiO2 Nanorod Arrays coated with ZnSe Passivation Layers
期刊论文
Applied Surface Science, 2018
作者:
Jianguo Lv
;
Xishun Jiang
;
Lulu Fang
;
Liping Jin
;
Yanfen Wang
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/04/24
BiS quantum dots
ZnSe passivation layers
TiO nanorod array
Photoelectrochemical performance
Modulation of electrical properties and current conduction mechanism of HfAlO/Ge gate stack by ALD-derived Al2O3 passivation layer
期刊论文
Journal of Alloys and Compounds, 2017, 卷号: Vol.695, 页码: 1591-1599
作者:
Li,W. D.
;
Jin,P.
;
Wei,H. H.
;
Xiao,X. D.
;
Gao,J.
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/04/22
SURFACE PASSIVATION
INTERFACE PROPERTIES
HIGH-PERFORMANCE
DEPOSITED AL2O3
HYBRID FILMS
GE
DIELECTRICS
HFO2
CAPACITORS
GAAS
Modulation of interfacial and electrical properties of HfGdO/GaAs gate stacks by ammonium sulfide passivation and rapid thermal annealing
期刊论文
Journal of Alloys and Compounds, 2017, 卷号: Vol.704, 页码: 322-328
作者:
Lv,J. G.
;
Li,W. D.
;
Zheng,C. Y.
;
Zhu,L.
;
Liang,S.
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/04/22
ATOMIC LAYER DEPOSITION
BAND ALIGNMENT
HFO2
GAAS
DIELECTRICS
FILMS
GD
Passivation of Ge surface treated with trimethylaluminum and investigation of electrical properties of HfTiO/Ge gate stacks
期刊论文
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2017, 卷号: Vol.33 No.8, 页码: 901-906
作者:
Jiang,Shanshan
;
Zhu,Li
;
Gao,Juan
;
Xiao,Dongqi
;
Liang,Shuang
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2019/04/24
ATOMIC-LAYER-DEPOSITION
THERMAL-STABILITY
BAND ALIGNMENT
MOS CAPACITORS
HFO2
DIELECTRICS
AL2O3
SUBSTRATE
QUALITY
CMOS
Corrosion resistance of Ni/Cu/Ni–P triple-layered coating on Mg–Li alloy
期刊论文
Surface and Coatings Technology, 2014, 卷号: Vol.254, 页码: 440-446
作者:
Jin,Nan
;
Wang,Lu
;
Chen,Weiwei
;
Luo,Dawei
;
Chen,Dehua
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/04/22
AZ91D MAGNESIUM ALLOY
CHLORIDE SOLUTIONS
NI
COPPER
NICKEL
PASSIVATION
DISSOLUTION
PRETREATMENT
OXIDATION
SURFACE
Modulating the Interface Quality and Electrical Properties of HfTiO/InGaAs Gate Stack by Atomic-Layer-Deposition-Derived Al2O3 Passivation Layer
期刊论文
ACS APPLIED MATERIALS & INTERFACES, ACS APPLIED MATERIALS & INTERFACES, 2014, 卷号: Vol.6 No.24, 页码: 22013-22025
作者:
Sun,Zhaoqi
;
Chen,Hanshuang
;
Gao,Juan
;
He,Gang
;
Chen,Xiaoshuang
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/04/24
PRECISE DETERMINATION
SURFACE PASSIVATION
BAND-GAP
GAAS
DIELECTRICS
CHEMISTRY
FILMS
HFO2
HETEROJUNCTIONS
SEMICONDUCTORS
©版权所有 ©2017 CSpace - Powered by
CSpace