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	Atomic-layer-deposited AlO passivation dependent interface chemistry, band alignment and electrical properties of HfYO/Si gate stacks
	Die Wang; Shuang Liang; Fen Qiao; Gang He
刊名	Journal of Materials Science & Technology
	2019
卷号	Vol.35 No.5页码:769-776
关键词	AlOpassivation layer Co-sputtering HYO films Annealing Electrical properties Conduction mechanism
ISSN号	1005-0302
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2203830
专题	安徽大学
作者单位	1.School of Energy & Power Engineering, Jiangsu University, Zhenjiang, 212013, China 2.Institute of Physical Science and Information Technology, Anhui University, Hefei, 230601, China 3.a School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei, 230601, China
推荐引用方式 GB/T 7714	Die Wang,Shuang Liang,Fen Qiao,et al. Atomic-layer-deposited AlO passivation dependent interface chemistry, band alignment and electrical properties of HfYO/Si gate stacks[J]. Journal of Materials Science & Technology,2019,Vol.35 No.5:769-776.
APA	Die Wang,Shuang Liang,Fen Qiao,&Gang He.(2019).Atomic-layer-deposited AlO passivation dependent interface chemistry, band alignment and electrical properties of HfYO/Si gate stacks.Journal of Materials Science & Technology,Vol.35 No.5,769-776.
MLA	Die Wang,et al."Atomic-layer-deposited AlO passivation dependent interface chemistry, band alignment and electrical properties of HfYO/Si gate stacks".Journal of Materials Science & Technology Vol.35 No.5(2019):769-776.

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