| Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD‐Derived Al2O3 Passivation Layer and Forming Gas Annealing | |
| Wendong Li; Shuang Liang; Li Zhu; Mao Liu; Mingliang Tian; Zhaoqi Sun; Gang He; Shanshan Jiang | |
| 刊名 | Advanced Electronic Materials
 |
| 2018 | |
| 卷号 | Vol.4 No.4 |
| 关键词 | electrical properties forming gas annealing high‐k gate dielectrics interface chemistry metal‐oxide‐semiconductor capacitors |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2154558 |
| 专题 | 安徽大学 |
| 作者单位 | 1.Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, P.R. China 2.School of Physics and Materials Science, Radiation Detection Materials & 3.Anhui Key Laboratory for Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of Chinese Academy of Science, Hefei, P.R. China 4.Devices Lab, Anhui University, Hefei, P.R. China |
| 推荐引用方式 GB/T 7714 | Wendong Li,Shuang Liang,Li Zhu,et al. Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD‐Derived Al2O3 Passivation Layer and Forming Gas Annealing[J]. Advanced Electronic Materials,2018,Vol.4 No.4. |
| APA | Wendong Li.,Shuang Liang.,Li Zhu.,Mao Liu.,Mingliang Tian.,...&Shanshan Jiang.(2018).Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD‐Derived Al2O3 Passivation Layer and Forming Gas Annealing.Advanced Electronic Materials,Vol.4 No.4. |
| MLA | Wendong Li,et al."Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD‐Derived Al2O3 Passivation Layer and Forming Gas Annealing".Advanced Electronic Materials Vol.4 No.4(2018). |
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