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新疆理化技术研究所 [53]
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期刊论文 [48]
学位论文 [5]
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2022 [3]
2021 [3]
2020 [2]
2019 [4]
2018 [6]
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1/f Noise responses of Ultra-Thin Body and Buried oxide FD-SOI PMOSFETs under total ionizing dose irradiation
期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2022, 卷号: 176, 期号: 11-12, 页码: 1202-1214
作者:
Zhang, RQ (Zhang, Ruiqin) [1] , [2] , [3]
;
Zheng, QW (Zheng, Qiwen) [1] , [2]
;
Lu, W (Lu, Wu) [1] , [2]
;
Cui, JW (Cui, Jiangwei) [1] , [2]
;
Li, YD (Li, Yudong) [1] , [2]
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2022/04/07
Total ionizing dose irradiation
UTBB FD-SOI
1
f noise
Total Ionizing Dose Effects of the Color Complementary Metal Oxide Semiconductor (CMOS) Image Sensor at Different Bias
期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2022, 卷号: 17, 期号: 1, 页码: 121-127
作者:
Yang, ZK (Yang, Zhikang) [1] , [2]
;
Wen, L (Wen, Lin) [1]
;
Li, YD (Li, Yudong) [1]
;
Liu, BK (Liu, Bingkai) [1] , [2]
;
Fu, J (Fu, Jing) [1] , [2]
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2022/06/21
Color CMOS Image Sensor
Radiation Damage
Total Ionizing Dose Effects
Bias Condition
Competitive Delocalized Charge Transfer Boosted by Solvent Induction Strategy for Survivable Colorimetric Detection of ng-Level Urea
期刊论文
ANALYTICAL CHEMISTRY, 2022, 卷号: 94, 期号: 16, 页码: 6318-6328
作者:
Hu, XY (Hu, Xiaoyun) [1] , [2]
;
Zhang, TS (Zhang, Tianshi) [1] , [2]
;
Li, JG (Li, Jiguang) [1] , [2]
;
Ma, ZW (Ma, Zhiwei) [1] , [2]
;
Lei, D (Lei, Da) [1]
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2022/05/27
P型金属氧化物半导体(PMOS)剂量计探头的差分工作电路技术
期刊论文
辐射研究与辐射工艺学报, 2021, 卷号: 39, 期号: 1, 页码: 85-90
作者:
王思源1,2
;
孙静2
;
陆妩1,2
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2021/03/09
金属氧化物半导体场效应晶体管(PMOSFET)
剂量计
差分电路
灵敏度
总剂量
Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs
期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 9, 页码: 1423-1429
作者:
Feng, HN (Feng, Haonan) [1] , [2] , [3]
;
Yang, S (Yang, Sheng) [1] , [2] , [3]
;
Liang, XW (Liang, Xiaowen) [1] , [2] , [3]
;
Zhang, D (Zhang, Dan) [1] , [2] , [3]
;
Pu, XJ (Pu, Xiaojuan) [1] , [2] , [3]
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2022/03/24
SiC Power MOSFETs
Switching Characteristics
Total Ionizing Dose (TID) Effect
Static Characteristic
Parasitic Capacitance
TID Response and Radiation-Enhanced Hot-Carrier Degradation in 65-nm nMOSFETs: Concerns on the Layout-Dependent Effects
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 8, 页码: 1565-1570
作者:
Ren, ZX (Ren, Zhexuan)
;
1An, X (An, Xia) 1
;
Li, GS (Li, Gensong) 1
;
Liu, JY (Liu, Jingyi) 1
;
Xun, MZ (Xun, Mingzhu) 2
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2021/09/22
65 nmhot-carrier injection (HCI)layout-dependent effect (LDE)nMOSstressthreshold voltagetotal ionizing dose (TID)
Ba-3(BO3)(CO3)F: The First Borate Carbonate Fluoride Synthesized by the High-Temperature Solution Method
期刊论文
CHEMISTRY-A EUROPEAN JOURNAL, 2020, 卷号: 26, 期号: 70, 页码: 16628-16632
作者:
Huang, CM (Huang, Chunmei)[ 1,2 ]
;
Zhang, FF (Zhang, Fangfang)[ 1,2 ]
;
Cheng, SC (Cheng, Shichao)[ 1 ]
;
Yang, ZH (Yang, Zhihua)[ 1,2 ]
;
Li, H (Li, Hao)[ 1,2 ]
收藏
  |  
浏览/下载:52/0
  |  
提交时间:2021/01/05
borate carbonate
borate fluoride
first-principle calculations
synthesis
The influence of channel width on total ionizing dose responses of the 130 nm H-gate partially depleted SOI NMOSFETs
期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 551-558
作者:
Xi, SX (Xi, Shan-Xue)[ 1,2,3 ]
;
Zheng, QW (Zheng, Qi-Wen)[ 1,2 ]
;
Lu, W (Lu, Wu)[ 1,2 ]
;
Cui, JW (Cui, Jiang-Wei)[ 1,2 ]
;
Wei, Y (Wei, Ying)[ 1,2 ]
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2020/07/06
Total ionizing dose
h-shape gate
channel width
partially depleted
Thermoelectric effect induced electricity in stretchable graphene-polymer nanocomposites for ultrasensitive self-powered strain sensor system
期刊论文
NANO ENERGY, 2019, 卷号: 56, 期号: 2, 页码: 25-32
作者:
Zhang, D (Zhang, Ding)[ 1,3 ]
;
Zhang, KW (Zhang, Kewei)[ 1,3 ]
;
Wang, YM (Wang, Yuanming)[ 1,3 ]
;
Wang, YH (Wang, Yuanhao)[ 2 ]
;
Yang, Y (Yang, Ya)[ 1,3 ]
收藏
  |  
浏览/下载:96/0
  |  
提交时间:2019/02/25
Graphene-polymer nanocomposites
Thermoelectric effect
Stretchable
Self-powered
Strain sensors
Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709
作者:
Zheng, QW (Zheng, Qiwen)[ 1 ]
;
Cui, JW (Cui, Jiangwei)[ 1 ]
;
Xu, LW (Xu, Liewei)[ 2 ]
;
Ning, BX (Ning, Bingxu)[ 3 ]
;
Zhao, K (Zhao, Kai)[ 3 ]
收藏
  |  
浏览/下载:101/0
  |  
提交时间:2019/05/14
Back-gate biasing
forward body bias (FBB)
total ionizing dose (TID)
ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)
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