CORC

在结果中检索

CORC

浏览/检索结果: 共11条，第1-10条 帮助

限定条件                
已选(0)清除 条数/页：   排序方式：
Temperature-dependent low-frequency noise in indium-zinc-oxide thin-film transistors down to 10 K 期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: 66, 期号: 5, 页码: 2192-2197
作者:  Liu, Yuan;  He, Hongyu;  Chen, Ya-Yi;  Chen, Rongsheng*;  Wang, Li
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/27
Analytical Drain Current Model for Amorphous and Polycrystalline Silicon Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States 会议论文
9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT), Shenzhen, PEOPLES R CHINA, NOV 16-18, 2018
作者:  He, Hongyu*;  Liu, Yuan;  Yan, Binghui;  Lin, Xinnan;  Zheng, Xueren
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/27
Analysis and Simulation of Low-Frequency Noise in Indium-Zinc-Oxide Thin-Film Transistors 期刊论文
IEEE Journal of the Electron Devices Society, 2018, 卷号: 6, 期号: 1, 页码: 271-279
作者:  Liu, Yuan;  He, Hongyu;  Chen, Rongsheng*;  En, Yun-Fei;  Li, Bin
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/27
Drain Current Model Based on the Meyer-Neldel Rule for Polycrystalline ZnO Thin-Film Transistors at Different Temperatures 会议论文
24th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Chengdu, PEOPLES R CHINA, JUL 04-07, 2017
作者:  He, Hongyu*;  Liu, Yuan;  Yan, Binghui;  Lin, Xinnan;  Zheng, Xueren
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/27
Analytical Drain Current Model for Amorphous InGaZnO Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 期号: 9, 页码: 3654-3660
作者:  He, Hongyu*;  Liu, Yuan;  Yan, Binghui;  Lin, Xinnan;  Zheng, Xueren
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/27
Analytical Drain Current Model for Amorphous InGaZnO Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States 期刊论文
IEEE Transactions on Electron Devices, 2017, 卷号: 64, 期号: 9, 页码: 3654-3660
作者:  He, Hongyu*;  Liu, Yuan;  Yan, Binghui;  Lin, Xinnan;  Zheng, Xueren
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/27
Simple leakage Current and 1/f Noise Expressions for Polycrystalline Silicon Thin-Film Transistors 会议论文
IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Univ Hong Kong, Hong Kong, PEOPLES R CHINA, AUG 03-05, 2016
作者:  He, Hongyu*;  Deng, Wanling;  Liu, Yuan;  Lin, Xinnan;  Zheng, Xueren
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/27
Analytical Drain Current Model for Organic Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States 期刊论文
IEEE Transactions on Electron Devices, 2016, 卷号: 63, 期号: 11, 页码: 4423-4431
作者:  He, Hongyu*;  Liu, Yuan;  Yan, Binghui;  Lin, Xinnan;  Zheng, Xueren
收藏  |  浏览/下载：6/0  |  提交时间：2019/12/27
Above-Threshold 1/f Noise Expression for Amorphous InGaZnO Thin-Film Transistors Considering Series Resistance Noise 期刊论文
IEEE Electron Device Letters, 2015, 卷号: 36, 期号: 10, 页码: 1056-1059
作者:  He, Hongyu*;  Zheng, Xueren;  Zhang, Shengdong
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/27
A Simple Leakage Current Model for Polycrystalline Silicon Nanowire Thin-Film Transistors 期刊论文
2013 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2013, 页码: 1-2
作者:  He, Hongyu*;  He, Jin;  Deng, Wanling;  Wang, Hao;  Hu, Yue
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/27

©版权所有 ©2017 CSpace - Powered by CSpace