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	Analytical Drain Current Model for Amorphous and Polycrystalline Silicon Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States
	He, Hongyu*; Liu, Yuan; Yan, Binghui; Lin, Xinnan; Zheng, Xueren; Zhang, Shengdong
	2018
会议名称	9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)
会议日期	NOV 16-18, 2018
会议地点	Shenzhen, PEOPLES R CHINA
关键词	Amorphous silicon polycrystalline silicon thin-film transistor trap states analytical model
页码	18-19
会议录	2018 9TH INTHERNATIONAL CONFERENCE ON COMPUTER AIDED DESIGN FOR THIN-FILM TRANSISTORS (CAD-TFT)
URL标识	查看原文
WOS记录号	WOS:000458325100014
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/5689883
专题	南华大学
作者单位	[He, Hongyu] Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China.
推荐引用方式 GB/T 7714	He, Hongyu*,Liu, Yuan,Yan, Binghui,et al. Analytical Drain Current Model for Amorphous and Polycrystalline Silicon Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States[C]. 见:9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT). Shenzhen, PEOPLES R CHINA. NOV 16-18, 2018.

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