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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 内容类型：会议     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Reduction of leakage current in GaN-based high-electron mobility transistor employing carbon-doped GaN superlattice buffer layers (EI收录) 会议 Beijing, China, 作者:  Xu, Mingsheng[1];  Weng, Yuanhang[1];  Wang, Hong[1] 收藏  |  浏览/下载：3/0  |  提交时间：2019/04/11 Buffer layers  Electron mobility  Electronic properties  Energy gap  Gallium alloys  Gallium nitride  Leakage currents  Optical waveguides  Transistors  Wide band gap semiconductors   Electronic properties and work functions of silicane/fully hydrogenated h-BN and silicane/graphane nanosheets (EI收录) 会议 Wuhan, China, 作者:  Liang, Qiuhua[1];  Jiang, Junke[1];  Sun, Xiang[1];  Chen, Xianping[2] 收藏  |  浏览/下载：3/0  |  提交时间：2019/04/11 Bonding  Boron nitride  Chemical bonds  Electric fields  Electronic properties  Electronics packaging  Energy gap  Hydrogenation  Optoelectronic devices  Silicon  Van der Waals forces  Work function   Electrodeposition of Cu2O/g-C3N4 heterojunction film on an FTO substrate for enhancing visible light photoelectrochemical water splitting (CPCI-S收录) 会议 作者:  Zhang, Shengsen[1,2];  Yan, Jie[1];  Yang, Siyuan[1];  Xu, Yuehua[1];  Cai, Xin[1] 收藏  |  浏览/下载：9/0  |  提交时间：2019/04/11 Cuprous oxide  Graphitic carbon nitride  Heterojunction film  Electrodeposition  Visible light  Photoelectrochemical water splitting  Hydrogen evolution   Graphane/fully hydrogenated h-BN bilayer: Marvellous dihydrogen bonding and effective band structure engineering (EI收录) 会议 Wuhan, China, 作者:  Jiang, Junke[1];  Liang, Qiuhua[1];  Sun, Xiang[1];  Chen, Xianping[2] 收藏  |  浏览/下载：2/0  |  提交时间：2019/04/11 Band structure  Bonding  Boron nitride  Chemical bonds  Electric fields  Electronics packaging  Energy gap  Hydrogenation  Optoelectronic devices  Van der Waals forces