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Highly efficient 1.53 mu m luminescence in ErxYb2-xSi2O7 thin films grown on Si substrate 期刊论文
materials letters, 2011, 卷号: 65, 期号: 5, 页码: 860-862
Zheng J; Tao YL; Wang W; Zhang LZ; Zuo YH; Xue CL; Cheng BW; Wang QM
收藏  |  浏览/下载:65/3  |  提交时间:2011/07/05
Efficient 1.53 mu m emission and energy transfer in Si/Er-Si-O multilayer structure 期刊论文
materials research bulletin, 2011, 卷号: 46, 期号: 2, 页码: 262-265
作者:  Xue CL
收藏  |  浏览/下载:63/4  |  提交时间:2011/07/05
Size-dependent electroluminescence from Si quantum dots embedded in amorphous SiC matrix 期刊论文
journal of applied physics, 2011, 卷号: 110, 期号: 6, 页码: 64322
Rui YJ; Li SX; Xu J; Song C; Jiang XF; Li W; Chen KJ; Wang QM; Zuo YH
收藏  |  浏览/下载:20/0  |  提交时间:2012/02/06
Luminescence enhancement from Si-based materials by introducing a photonic crystal double-heterostructure slot waveguide microcavity 期刊论文
optoelectronics letters, 2011, 卷号: 7, 期号: 4, 页码: 266-268
Wang, Yue; Wu, Yuan-da; Zhang, Jia-shun; An, Jun-ming; Hu, Xiong-wei
收藏  |  浏览/下载:21/0  |  提交时间:2012/06/14
Effect of annealing on photoluminescence properties of neon implanted GaN 期刊论文
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 2, 页码: art. no. 025107
作者:  Yang H;  Lu GJ;  Zhang SM;  Zhao DG;  Yang H
收藏  |  浏览/下载:66/1  |  提交时间:2010/03/08
Defect influence on luminescence efficiency of GaN-based LEDs 期刊论文
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 371-374
Li SP (Li Shuping); Fang ZL (Fang Zhilai); Chen HY (Chen Hangyang); Li JC (Li Jinchai); Chen XH (Chen Xiaohong); Yuan XL (Yuan Xiaoli); Sekiguchi T (Sekiguchi Takashi); Wang QM (Wang Qiming); Kang JY (Kang Junyong)
收藏  |  浏览/下载:35/0  |  提交时间:2010/04/11
Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots 期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 8, 页码: art.no.083123
作者:  Zhao DG
收藏  |  浏览/下载:653/4  |  提交时间:2010/04/11
Effect of GaAS(100) 2 degrees surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots 期刊论文
applied surface science, 2006, 卷号: 252, 期号: 23, 页码: 8126-8130
Liang S (Liang S.); Zhu HL (Zhu H. L.); Ye XL (Ye X. L.); Wang W (Wang W.)
收藏  |  浏览/下载:39/0  |  提交时间:2010/04/11
Near infrared photoluminescence from Yb,Al Co-implanted SiO2 films on silicon 期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 8, 页码: 2183-2186
Zhang JG (Zhang Jian-Guo); Wang XX (Wang Xiao-Xin); Cheng BW (Cheng Bu-Wen); Yu JZ (Yu Jin-Zhong); Wang QM (Wang Qi-Ming)
收藏  |  浏览/下载:20/0  |  提交时间:2010/04/11
Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films 期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 25, 页码: art.no.252101
Zhao DG (Zhao D. G.); Jiang DS (Jiang D. S.); Yang H (Yang Hui); Zhu JJ (Zhu J. J.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Liang JW (Liang J. W.); Hao XP (Hao X. P.); Wei L (Wei L.); Li X (Li X.); Li XY (Li X. Y.); Gong HM (Gong H. M.)
收藏  |  浏览/下载:57/0  |  提交时间:2010/04/11


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