Highly efficient 1.53 mu m luminescence in ErxYb2-xSi2O7 thin films grown on Si substrate

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	Highly efficient 1.53 mu m luminescence in ErxYb2-xSi2O7 thin films grown on Si substrate
	Zheng J ; Tao YL ; Wang W ; Zhang LZ ; Zuo YH ; Xue CL ; Cheng BW ; Wang QM
刊名	materials letters
	2011
卷号	65 期号:5 页码:860-862
关键词	Luminescence Optical materials and properties Sputtering Thin films PHOTOLUMINESCENCE ER3+
ISSN号	0167-577x
通讯作者	zheng, j, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. zhengjun@semi.ac.cn
学科主题	光电子学
收录类别	SCI
资助信息	national basic research program of china (973 program) [2007-cb613404]; national natural science foundation of china [60906035, 61036001, 61036003, 51072194]; state key lab on integrated optoelectronics, is division
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	erxyb2-xsi2o7 thin films were grown on sio2/si substrate by sputtering method and subsequent annealing process. by introducing yb3+ into the lattices, the 1.53 mu m emission intensity in erxyb2-xsi2o7 is enhanced about 15 times, compared with er2si2o7. decay time measurements further show that the lifetime at 1.53 mu m is about 3.9 ms at the er concentration of 2 at.%, where the concentration is one order higher than the solubility limit of er3+ in silica (10(20) cm(-3)). our results indicate that such disilicate may have potential application for high-gain, compact waveguide amplifiers. (c) 2010 elsevier b.v. all rights reserved.
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/20985]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Zheng J,Tao YL,Wang W,et al. Highly efficient 1.53 mu m luminescence in ErxYb2-xSi2O7 thin films grown on Si substrate[J]. materials letters,2011,65(5):860-862.
APA	Zheng J.,Tao YL.,Wang W.,Zhang LZ.,Zuo YH.,...&Wang QM.(2011).Highly efficient 1.53 mu m luminescence in ErxYb2-xSi2O7 thin films grown on Si substrate.materials letters,65(5),860-862.
MLA	Zheng J,et al."Highly efficient 1.53 mu m luminescence in ErxYb2-xSi2O7 thin films grown on Si substrate".materials letters 65.5(2011):860-862.