Defect influence on luminescence efficiency of GaN-based LEDs

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	Defect influence on luminescence efficiency of GaN-based LEDs
	Li SP (Li Shuping) ; Fang ZL (Fang Zhilai) ; Chen HY (Chen Hangyang) ; Li JC (Li Jinchai) ; Chen XH (Chen Xiaohong) ; Yuan XL (Yuan Xiaoli) ; Sekiguchi T (Sekiguchi Takashi) ; Wang QM (Wang Qiming) ; Kang JY (Kang Junyong)
刊名	materials science in semiconductor processing
	2006
卷号	9 期号:1-3 页码:371-374
关键词	defects GaN luminescence efficiency LED
ISSN号	1369-8001
通讯作者	kang, jy, xiamen univ, dept phys, xiamen 361005, peoples r china. e-mail: jykang@xmu.edu.cn
中文摘要	wafers with normal light-emitting diode structure were grown by metal organic chemical vapor deposition system. the pressure and temperature were varied during growth of buffer layer in order to grow different types of epilayers. the cathodoluminescence results show that the interface distortion of quantum well plays an important role in radiant efficiency. the electroluminescence detections indicate that the dislocations also influence the external quantum efficiency by lowering the electron injection efficiency. (c) 2006 elsevier ltd. all rights reserved.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10544]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li SP ,Fang ZL ,Chen HY ,et al. Defect influence on luminescence efficiency of GaN-based LEDs[J]. materials science in semiconductor processing,2006,9(1-3):371-374.
APA	Li SP .,Fang ZL .,Chen HY .,Li JC .,Chen XH .,...&Kang JY .(2006).Defect influence on luminescence efficiency of GaN-based LEDs.materials science in semiconductor processing,9(1-3),371-374.
MLA	Li SP ,et al."Defect influence on luminescence efficiency of GaN-based LEDs".materials science in semiconductor processing 9.1-3(2006):371-374.