已选(0)清除
条数/页: 排序方式:
|
| Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文 journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145 作者: Duan RF 收藏  |  浏览/下载:80/4  |  提交时间:2011/07/05
|
| Strain effects on optical polarisation properties in (11(2)over-bar2) plane GaN films 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 11, 页码: art. no. 117104 Hao GD (Hao Guo-Dong); Chen YH (Chen Yong-Hai); Fan YM (Fan Ya-Ming); Huang XH (Huang Xiao-Hui); Wang HB (Wang Huai-Bing) 收藏  |  浏览/下载:12/0  |  提交时间:2010/12/28
|
| IN-PLANE OPTICAL ANISOTROPY OF STRAINED WURTZITE GaN IN THE A- AND R-PLANES 期刊论文 international journal of modern physics b, 2010, 卷号: 24, 期号: 27, 页码: 5439-5450 作者: Hao GD 收藏  |  浏览/下载:49/5  |  提交时间:2011/07/05
|
| Nanostructure in the p-layer and its impacts on amorphous silicon solar cells 期刊论文 journal of non-crystalline solids, 2006, 卷号: 352, 期号: 9-20, 页码: 1841-1846 Liao XB (Liao Xianbo); Du WH (Du Wenhui); Yang XS (Yang Xiesen); Povolny H (Povolny Henry); Xiang XB (Xiang Xianbi); Deng XM (Deng Xunming); Sun K (Sun Kai) 收藏  |  浏览/下载:179/0  |  提交时间:2010/04/11
|
| GdxSi grown with mass-analyzed low energy dual ion beam epitaxy technique 期刊论文 journal of crystal growth, 2002, 卷号: 242, 期号: 3-4, 页码: 389-394 Zhou JP; Chen NF; Zhang FQ; Song SL; Chai CL; Yang SY; Liu ZK; Lin LY 收藏  |  浏览/下载:54/0  |  提交时间:2010/08/12
|
| Hydrogen-dependent lattice dilation in GaN 期刊论文 semiconductor science and technology, 2000, 卷号: 15, 期号: 6, 页码: 619-621 Zhang JP; Wang XL; Sun DZ; Kong MY 收藏  |  浏览/下载:35/0  |  提交时间:2010/08/12
|
| MOCVD growth of cubic GaN: Materials and devices 会议论文 international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000 作者: Zhao DG; Zhang SM 收藏  |  浏览/下载:17/0  |  提交时间:2010/10/29
|
| Effect of Si doping on cubic GaN films grown on GaAs(100) 期刊论文 journal of crystal growth, 1999, 卷号: 206, 期号: 1-2, 页码: 150-154 作者: Zhao DG 收藏  |  浏览/下载:44/0  |  提交时间:2010/08/12
|
| High-concentration hydrogen in unintentionally doped GaN 会议论文 2nd international conference on nitride semiconductors (icns 97), tokushima city, japan, oct 27-31, 1997 Zhang JP; Wang XL; Sun DZ; Li XB; Kong MY 收藏  |  浏览/下载:8/0  |  提交时间:2010/11/15
|
| MOVPE growth of GaN and LED on (111) MgAl2O4 会议论文 2nd international conference on nitride semiconductors (icns 97), tokushima city, japan, oct 27-31, 1997 Duan SK; Teng XG; Wang YT; Li GH; Jiang HX; Han P; Lu DC 收藏  |  浏览/下载:5/0  |  提交时间:2010/11/15
|