MOVPE growth of GaN and LED on (111) MgAl2O4

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	MOVPE growth of GaN and LED on (111) MgAl2O4
	Duan SK ; Teng XG ; Wang YT ; Li GH ; Jiang HX ; Han P ; Lu DC
	1998
会议名称	2nd international conference on nitride semiconductors (icns 97)
会议日期	oct 27-31, 1997
会议地点	tokushima city, japan
关键词	GaN MgAl2O4 MOVPE LED DIODES
页码	197-201
通讯作者	duan sk chinese acad sci inst semicond natl integrated optoelect lab pob 912 beijing 100083 peoples r china. 电子邮箱地址: skduan@red.semi.ac.cn
中文摘要	the growth of wurtzite gan by low-pressure metalorganic vapor-phase epitaxy on (1 1 1) magnesium aluminate (mgal2o4) substrates have been studied. the morphological, crystalline, electrical and optical properties are investigated. a p-n junction gan led was fabricated on the mgal2o4 substrate. (c) 1998 elsevier science b.v. all rights reserved.
英文摘要	the growth of wurtzite gan by low-pressure metalorganic vapor-phase epitaxy on (1 1 1) magnesium aluminate (mgal2o4) substrates have been studied. the morphological, crystalline, electrical and optical properties are investigated. a p-n junction gan led was fabricated on the mgal2o4 substrate. (c) 1998 elsevier science b.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:36导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:36z (gmt). no. of bitstreams: 1 3057.pdf: 153976 bytes, checksum: b8cdcb163e0468d4a0742e07a704bb66 (md5) previous issue date: 1998; japan soc appl phys.; inst electr informat & commun engineers.; ieee.; electron devices soc.; chinese acad sci, inst semicond, natl integrated optoelect lab, beijing 100083, peoples r china; chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china; kansas state univ, dept phys, manhattan, ks 66506 usa; chinese acad sci, beijing lab electron microscopy, ctr condensed matter, beijing 100080, peoples r china; chinese acad sci, inst semicond, lab semicond mat, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	japan soc appl phys.; inst electr informat & commun engineers.; ieee.; electron devices soc.
会议录	journal of crystal growth, 189
会议录出版者	elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands
会议录出版地	po box 211, 1000 ae amsterdam, netherlands
学科主题	半导体材料
语种	英语
ISSN号	0022-0248
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/15075]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Duan SK,Teng XG,Wang YT,et al. MOVPE growth of GaN and LED on (111) MgAl2O4[C]. 见:2nd international conference on nitride semiconductors (icns 97). tokushima city, japan. oct 27-31, 1997.