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CORC

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Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW
收藏  |  浏览/下载：53/10  |  提交时间：2011/07/05
Theoretical study on InxGa1-xN/GaN quantum dots solar cell 期刊论文
physica b-condensed matter, 2011, 卷号: 406, 期号: 1, 页码: 73-76
作者:  Hou QF;  Yin HB;  Deng QW
收藏  |  浏览/下载：97/9  |  提交时间：2011/07/05
Comparative study of the surface passivation on crystalline silicon by silicon thin films with different structures 期刊论文
physica b-condensed matter, 2010, 卷号: 405, 期号: 1, 页码: 61-64
Zhao L; Diao HW; Zeng XB; Zhou CL; Li HL; Wang WJ
收藏  |  浏览/下载：214/74  |  提交时间：2010/04/04
Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films 期刊论文
diamond and related materials, 2010, 卷号: 19, 期号: 11, 页码: 1371-1376
Ying J (Ying J.); Zhang XW (Zhang X. W.); Fan YM (Fan Y. M.); Tan HR (Tan H. R.); Yin ZG (Yin Z. G.)
收藏  |  浏览/下载：27/0  |  提交时间：2010/12/28
Growth-Parameter Spaces and Optical Properties of Cubic Boron Nitride Films on Si(001) 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 5, 页码: art. no. 056801
作者:  You JB;  Zhang XW;  Fan YM;  Tan HR
收藏  |  浏览/下载：368/49  |  提交时间：2010/03/08
Effect of an indium-doped barrier on enhanced near-ultraviolet emission from InGaN/AlGaN: In multiple quantum wells grown on Si(111) 期刊论文
nanotechnology, 2007, 卷号: 18, 期号: 1, 页码: art.no.015402
Wu JJ (Wu Jiejun); Zhang GY (Zhang Guoyi); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo); Jia QJ (Jia Quanjie); Guo LP (Guo Liping)
收藏  |  浏览/下载：122/0  |  提交时间：2010/03/29
Using different carrier gases to control AlN film stress and the effect on morphology, structural properties and optical properties 期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 23, 页码: 7462-7466
Hu, WG; Liu, XL; Jiao, CM; Wei, HY; Kang, TT; Zhang, PF; Zhang, RQ; Fan, HB; Zhu, QS
收藏  |  浏览/下载：56/4  |  提交时间：2010/03/08
Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures 会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Wang, CM; Wang, XL; Hu, GX; Wang, JX; Li, JP
收藏  |  浏览/下载：119/30  |  提交时间：2010/03/29
Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure 期刊论文
applied surface science, 2006, 卷号: 253, 期号: 2, 页码: 762-765
Wang CM (Wang Cuimei); Wang XL (Wang Xiaoliang); Hu GX (Hu Guoxin); Wang JX (Wang Junxi); Li HP (Li Jianping); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载：31/0  |  提交时间：2010/04/11
Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy 期刊论文
journal of crystal growth, 2004, 卷号: 260, 期号: 1-2, 页码: 50-53
Chen CL; Chen NF; Liu LF; Li YL; Wu JL
收藏  |  浏览/下载：274/107  |  提交时间：2010/03/09

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