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科研机构
北京大学 [6]
半导体研究所 [2]
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期刊论文 [13]
专利 [2]
会议论文 [1]
发表日期
2009 [16]
学科主题
半导体材料 [1]
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GaN laser with refractory metal ELOG masks for intracavity contact
专利
专利号: US7638810, 申请日期: 2009-12-29, 公开日期: 2009-12-29
作者:
BOUR, DAVID P.
;
CORZINE, SCOTT W
收藏
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浏览/下载:6/0
  |  
提交时间:2019/12/26
Effect of silver growth temperature on the contacts between ag and zno thin films
期刊论文
Science in china series e-technological sciences, 2009, 卷号: 52, 期号: 9, 页码: 2779-2784
作者:
Li XinKun
;
Li QingShan
;
Liang DeChun
;
Xu YanDong
;
Xie XiaoJun
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/05/12
Zno
Schottky barrier
Interface
Msm structure
Facet-Selective Epitaxial Growth of Heterogeneous Nanostructures of Semiconductor and Metal: ZnO Nanorods on Ag Nanocrystals
期刊论文
2009
Fan, Feng-Ru
;
Ding, Yong( Georgia Inst Technol, Sch Mat Sci & Engn)
;
Liu, De-Yu
;
Tian, Zhong-Qun
;
田中群
;
Wang, Zhong Lin( Georgia Inst Technol, Sch Mat Sci & Engn)
;
王中林
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2011/04/26
High thermal performance mounting arrangements for optoelectronic devices
专利
专利号: GB2455489A, 申请日期: 2009-06-17, 公开日期: 2009-06-17
作者:
JAMES STUART MCKENZIE
;
MAJD ZOOROB
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浏览/下载:0/0
  |  
提交时间:2020/01/18
Photoresponsive nanoscale columnar transistors
期刊论文
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2009, 卷号: 106, 期号: 3, 页码: 691-696
作者:
Guo, Xuefeng
;
Xiao, Shengxiong
;
Myers, Matthew
;
Miao, Qian
;
Steigerwald, Michael L.
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  |  
浏览/下载:17/0
  |  
提交时间:2019/04/09
Chemistry
Field Effect Transistor
Nanofabrication
Nanoscience
Self-assembly
Ultraviolet photodetector fabricated from atomic-layer-deposited ZnO films (EI CONFERENCE)
会议论文
Shan C. X.
;
Zhang J. Y.
;
Yao B.
;
Shen D. Z.
;
Fan X. W.
;
Choy K. L.
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  |  
浏览/下载:20/0
  |  
提交时间:2013/03/25
Zinc oxide (ZnO) films have been prepared on glass substrate in layer-by-layer mode using an atomic-layer deposition (ALD) technique
and a metal-semiconductor-metal structured photodetector has been fabricated on the ZnO films employing interdigital Au as metal contacts. The photodetector shows a cutoff wavelength at around 390 nm and has an obvious responsivity in the whole UVA spectral range. Because the response of the ZnO photodetector covers the whole UV solar irradiation that can reach the earth
the photodetector promises to be useful in monitoring UV solar irradiation to protect people from harm caused by the solar irradiation. Furthermore
the capability of preparing large-area uniform ZnO films of ALD makes it favorable for possible mass production of this kind of photodetector. 2009 American Vacuum Society.
Intergrain current flow in a randomly oriented polycrystalline SmFeAsO0.85 oxypnictide
期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 95, 期号: 14
Kametani, F
;
Li, P
;
Abraimov, D
;
Polyanskii, AA
;
Yamamoto, A
;
Jiang, J
;
Hellstrom, EE
;
Gurevich, A
;
Larbalestier, DC
;
Ren, ZA
;
Yang, J
;
Dong, XL
;
Lu, W
;
Zhao, ZX
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浏览/下载:10/0
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提交时间:2013/09/18
SUPERCONDUCTING FILMS
43 K
COMPOUND
Effects of piezoelectric potential on the transport characteristics of metal-ZnO nanowire-metal field effect transistor
期刊论文
应用物理杂志, 2009
Gao, Zhiyuan
;
Zhou, Jun
;
Gu, Yudong
;
Fei, Peng
;
Hao, Yue
;
Bao, Gang
;
Wang, Zhong Lin
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2015/11/12
SCHOTTKY DIODES
NANOPIEZOTRONICS
SEMICONDUCTORS
NANOGENERATORS
SWITCHES
SENSOR
Photoresponsive nanoscale columnar transistors
期刊论文
proceedings of the national academy of sciences of the united states of america, 2009
Guo, Xuefeng
;
Xiao, Shengxiong
;
Myers, Matthew
;
Miao, Qian
;
Steigerwald, Michael L.
;
Nuckolls, Colin
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/13
chemistry
field effect transistor
nanofabrication
nanoscience
self-assembly
WALLED CARBON NANOTUBES
FIELD-EFFECT TRANSISTORS
MOLECULAR ELECTRONICS
DEVICES
POLYMER
Unipolar p-type single-walled carbon nanotube field-effect transistors using TTF-TCNQ as the contact material
期刊论文
nanotechnology, 2009
Xian, Xiaojun
;
Yan, Kai
;
Zhou, Wei
;
Jiao, Liying
;
Wu, Zhongyun
;
Liu, Zhongfan
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/13
ELECTRONIC-PROPERTIES
PERFORMANCE
COMPLEX
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