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	Ultraviolet photodetector fabricated from atomic-layer-deposited ZnO films (EI CONFERENCE)
	Shan C. X. ; Zhang J. Y. ; Yao B. ; Shen D. Z. ; Fan X. W. ; Choy K. L.
	2009
关键词	Zinc oxide (ZnO) films have been prepared on glass substrate in layer-by-layer mode using an atomic-layer deposition (ALD) technique and a metal-semiconductor-metal structured photodetector has been fabricated on the ZnO films employing interdigital Au as metal contacts. The photodetector shows a cutoff wavelength at around 390 nm and has an obvious responsivity in the whole UVA spectral range. Because the response of the ZnO photodetector covers the whole UV solar irradiation that can reach the earth the photodetector promises to be useful in monitoring UV solar irradiation to protect people from harm caused by the solar irradiation. Furthermore the capability of preparing large-area uniform ZnO films of ALD makes it favorable for possible mass production of this kind of photodetector. 2009 American Vacuum Society.
页码	1765-1768
收录类别	EI
内容类型	会议论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/33082]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出_会议论文
推荐引用方式 GB/T 7714	Shan C. X.,Zhang J. Y.,Yao B.,et al. Ultraviolet photodetector fabricated from atomic-layer-deposited ZnO films (EI CONFERENCE)[C]. 见:.

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