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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 发表日期：2002    学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Study of GaN thin films grown on vicinal SiC (0001) substrates by molecular beam epitaxy 期刊论文 semiconductor science and technology, 2002, 卷号: 17, 期号: 9, 页码: 957-960 Lu LW; Yan H; Yang CL; Xie MH; Wang ZG; Wang J; Ge WK 收藏  |  浏览/下载：51/0  |  提交时间：2010/08/12 PHOTOLUMINESCENCE  ENERGY   Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers 会议论文 9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001 Zhao YW; Sun NF; Dong HW; Jiao JH; Zhao JQ; Sun TN; Lin LY 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 indium phosphide  semi-insulating  annealing  PICTS  photoluminescence  SEMIINSULATING INP  INDIUM-PHOSPHIDE  FE  PHOTOLUMINESCENCE  TEMPERATURE   Characterization of diphasic nc-Si/a-Si : H thin films and solar cells 会议论文 29th ieee photovoltaic specialists conference, new orleans, la, may 19-24, 2002 Zhang SB; Xu YY; Hu ZH; Wang YQ; Zeng XB; Diao HW; Wang WJ; Kong GL; Liao XB 收藏  |  浏览/下载：22/7  |  提交时间：2010/10/29 SILICON  RAMAN   Improved Epitaxy of 3C-SiC Layers on Si(100) by New CVD/LPCVD System 期刊论文 半导体学报, 2002, 卷号: 23, 期号: 8, 页码: 800-804 Sun Guosheng; Wang Lei; Luo Muchang; Zhao Wanshun; Sun Dianzhao; Zeng Yiping; Li Jinmin; Lin Lanying 收藏  |  浏览/下载：20/0  |  提交时间：2010/11/23 Structural properties and Raman measurement of AlN films grown on Si (111) by NH3-GSMBE 期刊论文 journal of crystal growth, 2002, 卷号: 244, 期号: 3-4, 页码: 229-235 Luo MC; Wang XL; Li JM; Liu HX; Wang L; Sun DZ; Zeng YP; Lin LY 收藏  |  浏览/下载：36/0  |  提交时间：2010/08/12 atomic force microscopy  Raman  transmission electron microscopy  molecular beam epitaxy  aluminium nitride  ELECTRON-AFFINITY  GAN  SI(111)   Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers 期刊论文 materials science and engineering b-solid state materials for advanced technology, 2002, 卷号: 91, 期号: 0, 页码: 521-524 Zhao YW; Sun NF; Dong HW; Jiao JH; Zhao JQ; Sun TN; Lin LY 收藏  |  浏览/下载：82/19  |  提交时间：2010/08/12 indium phosphide  semi-insulating  annealing  PICTS  photoluminescence  SEMIINSULATING INP  INDIUM-PHOSPHIDE  FE  PHOTOLUMINESCENCE  TEMPERATURE