Characterization of diphasic nc-Si/a-Si : H thin films and solar cells

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	Characterization of diphasic nc-Si/a-Si : H thin films and solar cells
	Zhang SB ; Xu YY ; Hu ZH ; Wang YQ ; Zeng XB ; Diao HW ; Wang WJ ; Kong GL ; Liao XB
	2002
会议名称	29th ieee photovoltaic specialists conference
会议日期	may 19-24, 2002
会议地点	new orleans, la
关键词	SILICON RAMAN
页码	1182-1185
通讯作者	zhang sb chinese acad sci inst semicond state lab surface phys beijing 100083 peoples r china.
中文摘要	hydrogenated silicon films with diphasic structure have been prepared by using a new regime of plasma enhanced chemical vapor deposition (pecvd) in the region adjacent to the phase transition from amorphous to crystal. line state. the photoelectronic and microstructural properties of the films have been characterized by the constant photocurrent method (cpm), raman scattering and nuclear magnetic resonance (nmr). in comparison with typical hydrogenated amorphous silicon (a-si:h), these diphasic films with a crystalline fraction less than 0.3 show a similar optical absorption coefficient, lower deep-defect densities and higher stability upon light soaking. by using the diphasic nc-si/a-si films a p-i-n junction solar cell has been prepared with an initial efficiency of 8.51 % and a stabilized efficiency of 8.02 % on an area of 0.126 cm(2) (am1.5, 100 mw/cm(2)).
英文摘要	hydrogenated silicon films with diphasic structure have been prepared by using a new regime of plasma enhanced chemical vapor deposition (pecvd) in the region adjacent to the phase transition from amorphous to crystal. line state. the photoelectronic and microstructural properties of the films have been characterized by the constant photocurrent method (cpm), raman scattering and nuclear magnetic resonance (nmr). in comparison with typical hydrogenated amorphous silicon (a-si:h), these diphasic films with a crystalline fraction less than 0.3 show a similar optical absorption coefficient, lower deep-defect densities and higher stability upon light soaking. by using the diphasic nc-si/a-si films a p-i-n junction solar cell has been prepared with an initial efficiency of 8.51 % and a stabilized efficiency of 8.02 % on an area of 0.126 cm(2) (am1.5, 100 mw/cm(2)).; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:26z (gmt). no. of bitstreams: 1 2798.pdf: 242310 bytes, checksum: a23a7127685fa5b7030803477d96ed9c (md5) previous issue date: 2002; ieee electron devices soc.; chinese acad sci, inst semicond, state lab surface phys, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	ieee electron devices soc.
会议录	conference record of the twenty-ninth ieee photovoltaic specialists conference 2002
会议录出版者	ieee ; 345 e 47th st, new york, ny 10017 usa
会议录出版地	345 e 47th st, new york, ny 10017 usa
学科主题	半导体材料
语种	英语
ISBN号	0-7803-7471-1
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/13617]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang SB,Xu YY,Hu ZH,et al. Characterization of diphasic nc-Si/a-Si : H thin films and solar cells[C]. 见:29th ieee photovoltaic specialists conference. new orleans, la. may 19-24, 2002.