Study of GaN thin films grown on vicinal SiC (0001) substrates by molecular beam epitaxy

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Study of GaN thin films grown on vicinal SiC (0001) substrates by molecular beam epitaxy
	Lu LW ; Yan H ; Yang CL ; Xie MH ; Wang ZG ; Wang J ; Ge WK
刊名	semiconductor science and technology
	2002
卷号	17 期号:9 页码:957-960
关键词	PHOTOLUMINESCENCE ENERGY
ISSN号	0268-1242
通讯作者	lu lw,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china.
中文摘要	a detailed study of the characteristics of undoped gan films, grown on either vicinal or nominal flat sic (0001) substrates by molecular beam epitaxy, has been carried out using photoluminescence and raman scattering techniques. the i i k photoluminescence spectra of the gan film grown on the vicinal sic (0001) substrate show a strong and sharp near-bandgap peak (full width at half maximum (fwhm) similar to 16 mev). this feature contrasts with that of the gan film grown on the nominal flat sic (0001) substrate where the i i k photoluminescence spectra exhibit the near-bandgap peak (fwhm similar to 25 mev) and the intensity is approximately seven times weaker than that of the vicinal film sample. the redshift of the near-bandgap peak associated with excitons bound to shallow donors is related to the stress caused by both the lattice mismatch and the thermal expansion coefficient difference between gan and sic substrates. the measured thermal activation energy of the shallow donor of 33.4 mev is determined by using an arrhenius plot of the near-bandgap luminescence versus i it from the slope of the graph at high temperature. the temperature dependence of the fwhm of the near-bandgap luminescence has also been studied. the raman scattering measurements from the vicinal film reveal that the e-2 phonon peak is strengthened and the a(1)(lo) phonon peak is shifted towards the low-frequency side with enhanced intensity, in comparison to that from the nominal flat film, suggesting a reduction in the density of defects and a lower free carrier concentration in the vicinal gan film.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11782]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Lu LW,Yan H,Yang CL,et al. Study of GaN thin films grown on vicinal SiC (0001) substrates by molecular beam epitaxy[J]. semiconductor science and technology,2002,17(9):957-960.
APA	Lu LW.,Yan H.,Yang CL.,Xie MH.,Wang ZG.,...&Ge WK.(2002).Study of GaN thin films grown on vicinal SiC (0001) substrates by molecular beam epitaxy.semiconductor science and technology,17(9),957-960.
MLA	Lu LW,et al."Study of GaN thin films grown on vicinal SiC (0001) substrates by molecular beam epitaxy".semiconductor science and technology 17.9(2002):957-960.