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浏览/检索结果: 共6条，第1-6条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Addressing Failure and Aging Degradation in MRAM/MeRAM-on-FDSOI Integration 期刊论文 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2019, 卷号: 66, 页码: 239-250 作者:  Cai, Hao;  Wang, You;  Naviner, Lirida Alves de Barros;  Liu, Xinning;  Shan, Weiwei 收藏  |  浏览/下载：7/0  |  提交时间：2019/12/30 Fully depleted silicon-on-insulator (FDSOI)  magnetic tunnel junction (MTJ)  spin transfer torque magnetic random access memory (STT-MRAM)  voltage-controlled magnetic anisotropy (VCMA)  magnetoelectric random access memory (MeRAM)  aging  reliability  variability   Compact Model for Negative Capacitance Enhanced Spintronics Devices 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 卷号: 66, 页码: 2795-2801 作者:  Gao, Tianqi;  Zeng, Lang;  Zhang, Deming;  Zhang, Youguang;  Wang, Kang L. 收藏  |  浏览/下载：9/0  |  提交时间：2019/12/30 All spin logic (ASL) device  compact model  magnetic tunnel junction (MTJ)  negative capacitance (NC) effect  spin transfer torque (STT)  voltage-controlled magnetic anisotropy (VCMA)   Self-Adaptive Write Circuit for Magnetic Tunneling Junction Memory With Voltage-Controlled Magnetic Anisotropy Effect 期刊论文 IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2018, 卷号: 17, 页码: 492-499 作者:  Long, Mingzhi;  Zeng, Lang;  Gao, Tianqi;  Zhang, Deming;  Qin, Xiaowan 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/30 Magnetoelectric random access memory (MeRAM)  voltage controlled magnetic anisotropy (VCMA)  magnetic tunneling junction (MTJ)  write circuit  self-adaptive   Modeling and Exploration of the Voltage-Controlled Magnetic Anisotropy Effect for the Next-Generation Low-Power and High-Speed MRAM Applications 期刊论文 IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2017, 卷号: 16, 页码: 387-395 作者:  Kang, Wang;  Ran, Yi;  Zhang, Youguang;  Lv, Weifeng;  Zhao, Weisheng 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/30 Magnetic tunnel junction (MTJ)  nonvolatile memory  spin transfer torque (STT)  voltage-controlled magnetic anisotropy (VCMA)   Stateful Reconfigurable Logic via a Single Voltage-Gated Spin Hall-Effect Driven Magnetic Tunnel Junction in a Spintronic Memory 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 页码: 4295-4301 作者:  Zhang, He;  Kang, Wang;  Wang, Lezhi;  Wang, Kang L.;  Zhao, Weisheng 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/30 In-memory logic (IML)  magnetic tunnel junction (MTJ)  spin Hall effect (SHE)  voltage-controlled magnetic anisotropy (VCMA)   Novel Magnetic Tunneling Junction Memory Cell With Negative Capacitance-Amplified Voltage-Controlled Magnetic Anisotropy Effect 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 页码: 4919-4927 作者:  Zeng, Lang;  Gao, Tianqi;  Zhang, Deming;  Peng, Shouzhong;  Wang, Lezhi 收藏  |  浏览/下载：10/0  |  提交时间：2019/12/30 High speed  low power  magnetic tunneling junction (MTJ)  negative capacitance  voltage-controlled magnetic anisotropy (VCMA)