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浏览/检索结果: 共4条，第1-4条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Novel Cascadable Magnetic Majority Gates for Implementing Comprehensive Logic Functions 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 页码: 4687-4693 作者:  Li, Xin;  Song, Min;  Xu, Nuo;  Luo, Shijiang;  Zou, Qiming 收藏  |  浏览/下载：12/0  |  提交时间：2019/11/26 micromagnetic simulations  magnetic tunneling junction (MTJ)  Beyond CMOS logic devices  magnetic majority gates (MMGs)  cascading   Self-Adaptive Write Circuit for Magnetic Tunneling Junction Memory With Voltage-Controlled Magnetic Anisotropy Effect 期刊论文 IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2018, 卷号: 17, 页码: 492-499 作者:  Long, Mingzhi;  Zeng, Lang;  Gao, Tianqi;  Zhang, Deming;  Qin, Xiaowan 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/30 Magnetoelectric random access memory (MeRAM)  voltage controlled magnetic anisotropy (VCMA)  magnetic tunneling junction (MTJ)  write circuit  self-adaptive   Novel Magnetic Tunneling Junction Memory Cell With Negative Capacitance-Amplified Voltage-Controlled Magnetic Anisotropy Effect 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 页码: 4919-4927 作者:  Zeng, Lang;  Gao, Tianqi;  Zhang, Deming;  Peng, Shouzhong;  Wang, Lezhi 收藏  |  浏览/下载：10/0  |  提交时间：2019/12/30 High speed  low power  magnetic tunneling junction (MTJ)  negative capacitance  voltage-controlled magnetic anisotropy (VCMA)   MgO(001) barrier based magnetic tunnel junctions and their device applications 期刊论文 SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2013, 卷号: 56, 期号: 1, 页码: 29 Han, XF; Ali, SS; Liang, SH 收藏  |  浏览/下载：20/0  |  提交时间：2014/01/16 magnetic tunnel junction (MTJ)  tunneling magnetoresistance (TMR)  MgO  spin transfer torque (STT)  Coulomb blockade magnetoresistance (CBMR)