MgO(001) barrier based magnetic tunnel junctions and their device applications

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	MgO(001) barrier based magnetic tunnel junctions and their device applications
	Han, XF ; Ali, SS ; Liang, SH
刊名	SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY
	2013
卷号	56 期号:1 页码:29
关键词	magnetic tunnel junction (MTJ) tunneling magnetoresistance (TMR) MgO spin transfer torque (STT) Coulomb blockade magnetoresistance (CBMR)
ISSN号	1674-7348
通讯作者	Han, XF (reprint author), Chinese Acad Sci, State Key Lab Magnetism, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China.
中文摘要	Spintronics has received a great attention and significant interest within the past decades, and provided considerable and remarked applications in industry and electronic information etc. In spintronics, the MgO based magnetic tunnel junction (MTJ) is an important research advancement because of its physical properties and excellent performance, such as the high TMR ratio in MgO based MTJs. We present an overview of more than a decade development in MgO based MTJs. The review contains three main sections. (1) Research of several types of MgO based MTJs, including single-crystal MgO barrier based-MTJs, double barrier MTJs, MgO based MTJs with interlayer, novel electrode material MTJs based on MgO, novel barrier based MTJs, novel barrier MTJs based on MgO, and perpendicular MTJs. (2) Some typical physical effects in MgO based MTJs, which include six observed physical effects in MgO based MTJs, namely spin transfer torque (STT) effect, Coulomb blockade magnetoresistance (CBMR) effect, oscillatory magnetoresistance, quantum-well resonance tunneling effect, electric field assisted magnetization switching effect, and spincaloric effect. (3) In the last section, a brief introduction of some important device applications of MgO based MTJs, such as GMR & TMR read heads and magneto-sensitive sensors, both field and current switching MRAM, spin nano oscillators, and spin logic devices, have been provided.
资助信息	State Key Project of Fundamental Research of the Ministry of Science and Technology [2010CB934400]; National Natural Science Foundation of China [10934099, 51021061, 11104338]; National Science Fund for Distinguished Young Scholars [50325104]; NSFC [10911130234, F040803]; EPSRC of the United Kingdom [10911130234]; ANR of France [F040803]
语种	英语
公开日期	2014-01-16
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/57210]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Han, XF,Ali, SS,Liang, SH. MgO(001) barrier based magnetic tunnel junctions and their device applications[J]. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,2013,56(1):29.
APA	Han, XF,Ali, SS,&Liang, SH.(2013).MgO(001) barrier based magnetic tunnel junctions and their device applications.SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,56(1),29.
MLA	Han, XF,et al."MgO(001) barrier based magnetic tunnel junctions and their device applications".SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY 56.1(2013):29.