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北京大学 [9]

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期刊论文 [7]

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	New concept of planar germanium MOSFET with stacked germanide layers at source/drain 期刊论文 JAPANESE JOURNAL OF APPLIED PHYSICS, 2015 Xu, Hao; Sun, Lei; Zhang, Yi-Bo; Han, Jing-Wen; Wang, Yi; Zhang, Sheng-Dong 收藏 \| 浏览/下载：4/0 \| 提交时间：2017/12/03 HIGH-KAPPA GATE SCHOTTKY SOURCE/DRAIN METAL GATE MOBILITY CONTACTS SI TECHNOLOGY TRANSISTOR SUBSTRATE PMOSFETS
	New concept of planar germanium MOSFET with stacked germanide layers at source/drain 其他 2015-01-01 Xu, Hao; Sun, Lei; Zhang, Yi-Bo; Han, Jing-Wen; Wang, Yi; Zhang, Sheng-Dong 收藏 \| 浏览/下载：5/0 \| 提交时间：2017/12/04 HIGH-KAPPA GATE SCHOTTKY SOURCE/DRAIN METAL GATE MOBILITY CONTACTS SI TECHNOLOGY TRANSISTOR SUBSTRATE PMOSFETS
	Schottky-barrier height modulation of metal/In0.53Ga0.47As interfaces by insertion of atomic-layer deposited ultrathin Al2O3 期刊论文 journal of vacuum science technology b, 2011 Wang, Runsheng; Xu, Min; Ye, Peide D.; Huang, Ru 收藏 \| 浏览/下载：4/0 \| 提交时间：2015/11/13 aluminium compounds atomic layer deposition Fermi level gallium arsenide indium compounds MOSFET Schottky barriers METAL SOURCE/DRAIN MOSFETS
	Tuning of the Schottky barrier height in NiGe/n-Ge using ion-implantation after germanidation technique 期刊论文应用物理学快报, 2010 Guo, Yue; An, Xia; Huang, Ru; Fan, Chunhui; Zhang, Xing 收藏 \| 浏览/下载：3/0 \| 提交时间：2015/11/10 annealing elemental semiconductors germanium germanium alloys ion implantation nickel alloys rectification Schottky barriers Schottky diodes semiconductor-metal boundaries METAL SOURCE/DRAIN INTERFACE TEMPERATURE DEPENDENCE REDUCTION FILMS
	The modulation of Schottky barrier height of NiSi/n-Si Schottky diodes by silicide as diffusion source technique 期刊论文 chinese physics b, 2009 An Xia; Fan Chun-Hui; Huang Ru; Guo Yue; Xu Cong; Zhang Xing; Wang Yang-Yuan 收藏 \| 浏览/下载：4/0 \| 提交时间：2015/11/10 Schottky barrier height silicide-as-diffusion source Ni silicide FIELD-EFFECT TRANSISTOR METAL SOURCE/DRAIN THERMAL-STABILITY FILMS CONTACTS DRAIN
	Challenges of 22 nm and beyond CMOS technology 期刊论文 science in china series f information sciences, 2009 Huang Ru; Wu HanMing; Kang JinFeng; Xiao DeYuan; Shi XueLong; An Xia; Tian Yu; Wang RunSheng; Zhang LiangLiang; Zhang Xing; Wang YangYuan 收藏 \| 浏览/下载：2/0 \| 提交时间：2015/11/12 CMOS technology 22 nm technology node device architectures metal gate/high K dielectrics ultra low K dielectrics SILICON NANOWIRE TRANSISTORS CARRIER-TRANSPORT CHANNEL FINFETS DRAIN STRESSORS CARBON SOURCE/DRAIN GATE STACK METAL-GATE HIGH-K RELIABILITY CHARACTERISTICS PERFORMANCE ENHANCEMENT
	Impact of gate overlap on performance of Schottky barrier metal-oxide-semiconductor field-effect transistors including gate induced barrier lowering effect 其他 2008-01-01 Zeng, Lang; Liu, Xiao-Yan; Du, Gang; Kang, Jin-Feng; Han, Ru-Qi 收藏 \| 浏览/下载：3/0 \| 提交时间：2015/11/13 gate overlap image force Monte Carlo simulation Schottky barrier lowering Schottky barrier source/drain metal-oxide-semiconductor field-effect transistors (SB MOSFETs) SIMULATION MOSFETS LENGTH NM
	Feasible approach to the fabrication of asymmetric Schottky barrier MOSFETs by using the spacer technique 期刊论文 microelectronics journal, 2006 Sun, L; Li, DY; Liu, XY; Han, RQ 收藏 \| 浏览/下载：3/0 \| 提交时间：2015/11/10 Schottky barrier MOSFETs silicide asymmetric source/drain ultra thin body spacer technique FIELD-EFFECT TRANSISTORS MOS-TRANSISTORS METAL-GATE SOI NM SIMULATION S/D
	Studies of Ti- and Ni-germanide Schottky contacts on n-Ge(100) substrates 期刊论文微电子工程, 2005 Han, DD; Wang, Y; Tian, DY; Wang, W; Liu, XY; Kang, JF; Han, RQ 收藏 \| 浏览/下载：3/0 \| 提交时间：2015/11/10 Ni-germanide Schottky contacts Ge HIGH-KAPPA GATE METAL-GATE BARRIER SOURCE/DRAIN TRANSISTORS MOSFETS SILICON S/D

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