The modulation of Schottky barrier height of NiSi/n-Si Schottky diodes   by silicide as diffusion source technique

doi:10.1088/1674-1056/18/10/060

CORC > 北京大学 > 信息科学技术学院

	The modulation of Schottky barrier height of NiSi/n-Si Schottky diodes by silicide as diffusion source technique
	An Xia ; Fan Chun-Hui ; Huang Ru ; Guo Yue ; Xu Cong ; Zhang Xing ; Wang Yang-Yuan
刊名	chinese physics b
	2009
关键词	Schottky barrier height silicide-as-diffusion source Ni silicide FIELD-EFFECT TRANSISTOR METAL SOURCE/DRAIN THERMAL-STABILITY FILMS CONTACTS DRAIN
DOI	10.1088/1674-1056/18/10/060
英文摘要	This paper reports that the Schottky barrier height modulation of NiSi/n-Si is experimentally investigated by adopting a novel silicide-as-diffusion-source technique, which avoids the damage to the NiSi/Si interface induced from the conventional dopant segregation method. In addition, the impact of post-BF(2) implantation after silicidation on the surface morphology of Ni silicides is also illustrated. The thermal stability of Ni silicides can be improved by silicide-as-diffusion-source technique. Besides, the electron Schottky barrier height is successfully modulated by 0.11 eV at a boron dose of 10(15) cm(-2) in comparison with the non-implanted samples. The change of barrier height is not attributed to the phase change of silicide films but due to the boron pile-up at the interface of NiSi and Si substrate which causes the upward bending of conducting band. The results demonstrate the feasibility of novel silicide-as-diffusion-source technique for the fabrication of Schottky source/drain Si MOS devices.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000270300600060&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Physics, Multidisciplinary; SCI(E); EI; 中国科技核心期刊(ISTIC); 中国科学引文数据库(CSCD); 3; ARTICLE; 10; 4465-4469; 18
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/152793]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	An Xia,Fan Chun-Hui,Huang Ru,et al. The modulation of Schottky barrier height of NiSi/n-Si Schottky diodes by silicide as diffusion source technique[J]. chinese physics b,2009.
APA	An Xia.,Fan Chun-Hui.,Huang Ru.,Guo Yue.,Xu Cong.,...&Wang Yang-Yuan.(2009).The modulation of Schottky barrier height of NiSi/n-Si Schottky diodes by silicide as diffusion source technique.chinese physics b.
MLA	An Xia,et al."The modulation of Schottky barrier height of NiSi/n-Si Schottky diodes by silicide as diffusion source technique".chinese physics b (2009).