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浏览/检索结果: 共9条，第1-9条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Effect of polarization Coulomb field scattering on low temperature electron mobility in strained AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 MODERN PHYSICS LETTERS B, 2016, 卷号: 30, 期号: 35 作者:  Liu, Yan;  Lin, Zhao-Jun;  Yang, Ming;  Luan, Chong-Biao;  Wang, Yu-Tang 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/16 AlGaN/AlN/GaN heterostructure  field-effect transistor  polarization  Coulomb field scattering  two-dimensional electron gas  electron  mobility   Influence of the channel electric field distribution on the polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors 期刊论文 Chinese Physics B, 2014, 卷号: 23, 期号: 4 作者:  Yu, Ying-Xia;  Lin, Zhao-Jun;  Luan, Chong-Biao;  , Yuan-Jie;  Feng, Zhi-Hong 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/17 Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN_AlN_GaN heterostructure field-effect transistors 期刊论文 chinese physics b, 2013, 卷号: 22, 期号: 4, 页码: 047102 Cao Zhi-Fang , Lin Zhao-Jun, Lü Yuan-Jie, Luan Chong-Biao and Wang Zhan-Guo 收藏  |  浏览/下载：29/0  |  提交时间：2014/03/18 Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 chinese physics b, 2013, 卷号: 22, 期号: 4, 页码: 047102 Cao Zhi-Fang; Lin Zhao-Jun; Lu Yuan-Jie; Luan Chong-Biao; Wang Zhan-Guo 收藏  |  浏览/下载：28/0  |  提交时间：2013/09/17 Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor 期刊论文 chin. phys. b, 2013, 卷号: 22, 期号: 6, 页码: 067203 Yu Ying-Xia, Lin Zhao-Jun, Luan Chong-Biao, Wang Yu-Tang, Chen Hong, Wang Zhan-Guo 收藏  |  浏览/下载：29/0  |  提交时间：2014/03/18 A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics 期刊论文 chinese physics b, 2012, 卷号: 21, 期号: 9, 页码: 097104 Lu YJ (Lu Yuan-Jie); Lin ZJ (Lin Zhao-Jun); Yu YX (Yu Ying-Xia); Meng LG (Meng Ling-Guo); Cao ZF (Cao Zhi-Fang); Luan CB (Luan Chong-Biao); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：16/0  |  提交时间：2013/04/02 A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics 期刊论文 chinese physics b, 2012, 卷号: 21, 期号: 9, 页码: 16741056 Lü, Yuan-Jie; Lin, Zhao-Jun; Yu, Ying-Xia; Meng, Ling-Guo; Cao, Zhi-Fang; Luan, Chong-Biao; Wang, Zhan-Guo 收藏  |  浏览/下载：18/0  |  提交时间：2013/05/07 Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes 期刊论文 CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 1 作者:  Cao Zhi-Fang;  Lin Zhao-Jun;  Lu Yuan-Jie;  Luan Chong-Biao;  Yu Ying-Xia 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/23 AlGaN/AlN/GaN heterostructures  Schottky barrier diodes  power  consumption  series resistance   A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics 期刊论文 CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 9 作者:  Lu Yuan-Jie;  Lin Zhao-Jun;  Yu Ying-Xia;  Meng Ling-Guo;  Cao Zhi-Fang 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/23 AlGaN/GaN heterostructures  flat-band voltage  polarization charge  density