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	Effect of polarization Coulomb field scattering on low temperature electron mobility in strained AlGaN/AlN/GaN heterostructure field-effect transistors
	Liu, Yan; Lin, Zhao-Jun; Yang, Ming; Luan, Chong-Biao; Wang, Yu-Tang; Lv, Yuan-Jie; Feng, Zhi-Hong
刊名	MODERN PHYSICS LETTERS B
	2016
卷号	30期号:35
关键词	AlGaN/AlN/GaN heterostructure field-effect transistor polarization Coulomb field scattering two-dimensional electron gas electron mobility
DOI	10.1142/S021798491650411X
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4708571
专题	山东大学
作者单位	1.Shandong Univ, Sch Phys, Jinan 250100, Peoples R China. 2.[Lv,
推荐引用方式 GB/T 7714	Liu, Yan,Lin, Zhao-Jun,Yang, Ming,et al. Effect of polarization Coulomb field scattering on low temperature electron mobility in strained AlGaN/AlN/GaN heterostructure field-effect transistors[J]. MODERN PHYSICS LETTERS B,2016,30(35).
APA	Liu, Yan.,Lin, Zhao-Jun.,Yang, Ming.,Luan, Chong-Biao.,Wang, Yu-Tang.,...&Feng, Zhi-Hong.(2016).Effect of polarization Coulomb field scattering on low temperature electron mobility in strained AlGaN/AlN/GaN heterostructure field-effect transistors.MODERN PHYSICS LETTERS B,30(35).
MLA	Liu, Yan,et al."Effect of polarization Coulomb field scattering on low temperature electron mobility in strained AlGaN/AlN/GaN heterostructure field-effect transistors".MODERN PHYSICS LETTERS B 30.35(2016).

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