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Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes
Cao Zhi-Fang; Lin Zhao-Jun; Lu Yuan-Jie; Luan Chong-Biao; Yu Ying-Xia; Chen Hong; Wang Zhan-Guo
刊名CHINESE PHYSICS B
2012
卷号21期号:1
关键词AlGaN/AlN/GaN heterostructures Schottky barrier diodes power consumption series resistance
DOI10.1088/1674-1056/21/1/017103
URL标识查看原文
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/5190259
专题山东大学
作者单位1.Shandong Univ, Sch Phys, Jinan 250100, Peoples R China.
2.Chinese
推荐引用方式
GB/T 7714
Cao Zhi-Fang,Lin Zhao-Jun,Lu Yuan-Jie,et al. Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes[J]. CHINESE PHYSICS B,2012,21(1).
APA Cao Zhi-Fang.,Lin Zhao-Jun.,Lu Yuan-Jie.,Luan Chong-Biao.,Yu Ying-Xia.,...&Wang Zhan-Guo.(2012).Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes.CHINESE PHYSICS B,21(1).
MLA Cao Zhi-Fang,et al."Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes".CHINESE PHYSICS B 21.1(2012).
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