Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes | |
Cao Zhi-Fang; Lin Zhao-Jun; Lu Yuan-Jie; Luan Chong-Biao; Yu Ying-Xia; Chen Hong; Wang Zhan-Guo | |
刊名 | CHINESE PHYSICS B
![]() |
2012 | |
卷号 | 21期号:1 |
关键词 | AlGaN/AlN/GaN heterostructures Schottky barrier diodes power consumption series resistance |
DOI | 10.1088/1674-1056/21/1/017103 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5190259 |
专题 | 山东大学 |
作者单位 | 1.Shandong Univ, Sch Phys, Jinan 250100, Peoples R China. 2.Chinese |
推荐引用方式 GB/T 7714 | Cao Zhi-Fang,Lin Zhao-Jun,Lu Yuan-Jie,et al. Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes[J]. CHINESE PHYSICS B,2012,21(1). |
APA | Cao Zhi-Fang.,Lin Zhao-Jun.,Lu Yuan-Jie.,Luan Chong-Biao.,Yu Ying-Xia.,...&Wang Zhan-Guo.(2012).Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes.CHINESE PHYSICS B,21(1). |
MLA | Cao Zhi-Fang,et al."Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes".CHINESE PHYSICS B 21.1(2012). |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论