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A 0.13 mu m 64Mb HfOx ReRAM Using Configurable Ramped Voltage Write and Low Read-Disturb Sensing Techniques for Reliability Improvement 会议论文
作者:  Han, Xiaowei;  Jia, Qian;  Sun, Hongbin;  Wang, Longfei;  Wu, Huaqiang
收藏  |  浏览/下载:8/0  |  提交时间:2019/11/26
A 0.13μm 64Mb HfOxReRAM using configurable ramped voltage write and low read-disturb sensing techniques for reliability improvement 会议论文
作者:  Han, Xiaowei;  Jia, Qian;  Sun, Hongbin;  Wang, Longfei;  Wu, Huaqiang
收藏  |  浏览/下载:5/0  |  提交时间:2019/11/26
Statistical Assessment Methodology for the Design and Optimization of Cross-Point RRAM Arrays 其他
2014-01-01
Li, Haitong; Jiang, Zizhen; Huang, Peng; Chen, Hong-Yu; Chen, Bing; Liu, Rui; Chen, Zhe; Zhang, Feifei; Liu, Lifeng; Gao, Bin; Liu, Xiaoyan; Yu, Shimeng; Wong, H.S. Philip; Kang, Jinfeng
收藏  |  浏览/下载:5/0  |  提交时间:2015/11/13
Write Disturb Analyses on Half-Selected Cells of Cross-Point RRAM Arrays 其他
2014-01-01
Li, Haitong; Chen, Hong-Yu; Chen, Zhe; Chen, Bing; Liu, Rui; Qiu, Gang; Huang, Peng; Zhang, Feifei; Jiang, Zizhen; Gao, Bin; Liu, Lifeng; Liu, Xiaoyan; Yu, Shimeng; Wong, H.S. Philip; Kang, Jinfeng
收藏  |  浏览/下载:3/0  |  提交时间:2015/11/13
A new 10T SRAM cell with improved read/write margin and no half select disturb for bit-interleaving architecture 期刊论文
Applied Mechanics and Materials, 2013, 卷号: Vol.263-266 Part 1, 页码: 9-14
作者:  Zhou,Honggang;  Song,Qiang;  Tan,Shoubiao;  Peng,Chunyu
收藏  |  浏览/下载:2/0  |  提交时间:2019/04/22
A New 10T SRAM Cell with Improved Read/Write Margin and no Half Select Disturb for Bit-interleaving Architecture 期刊论文
INFORMATION TECHNOLOGY APPLICATIONS IN INDUSTRY, PTS 1-4, 2013, 卷号: Vol.263-266, 页码: 9-14
作者:  Zhou,Honggang;  Song,Qiang;  Tan,Shoubiao;  Peng,Chunyu
收藏  |  浏览/下载:10/0  |  提交时间:2019/04/22
王昀:一个房子就是一个世界 期刊论文
2010, 2010
黄源; 李有为; 周之毅
收藏  |  浏览/下载:3/0


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