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	Statistical Assessment Methodology for the Design and Optimization of Cross-Point RRAM Arrays
	Li, Haitong ; Jiang, Zizhen ; Huang, Peng ; Chen, Hong-Yu ; Chen, Bing ; Liu, Rui ; Chen, Zhe ; Zhang, Feifei ; Liu, Lifeng ; Gao, Bin ; Liu, Xiaoyan ; Yu, Shimeng ; Wong, H.S. Philip ; Kang, Jinfeng
	2014
关键词	Resistive random access memory (RRAM) variation cross-point array statistical assessment optimization
英文摘要	A comprehensive assessment methodology for the design and optimization of cross-point resistive random access memory (RRAM) arrays is developed based on a simulation platform implementing an RRAM SPICE model with intrinsic variation effects. A statistical assessment of write/read functionality and circuit reliability is performed via quantifying the impact of array-level variations on RRAM memory circuits. Operation reliability including write failure probability and write disturb effect is quantified, with a strategy of choosing bias schemes and a V-dd design tradeoff presented. Circuit/device co-design guidelines and requirements are further extracted based on the assessment of a series of figure-of-merits such as energy-delay product, disturb immunity, and interconnect scaling effect. Finally, an optimized cross-point array configuration is designed to boost circuit performance. The developed assessment flow will pave the way towards robust circuit/device co-design.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000346141000008&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/IMW.2014.6849357
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292445]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Li, Haitong,Jiang, Zizhen,Huang, Peng,et al. Statistical Assessment Methodology for the Design and Optimization of Cross-Point RRAM Arrays. 2014-01-01.

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