| A 0.13μm 64Mb HfOxReRAM using configurable ramped voltage write and low read-disturb sensing techniques for reliability improvement | |
| Han, Xiaowei; Jia, Qian; Sun, Hongbin; Wang, Longfei; Wu, Huaqiang; Cai, Yimao; Zhang, Feng; Xie, Yongyi; Dong, Fangxu; Wang, Xiaoguang | |
| 2017 | |
| 关键词 | Embedded storages Evaluation board Iot devices Read disturb Reliability improvement Sensing techniques |
| 卷号 | 2017-April |
| 会议录 | Proceedings of the Custom Integrated Circuits Conference
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| URL标识 | 查看原文 |
| ISSN号 | 0886-5930 |
| 内容类型 | 会议论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2949833 |
| 专题 | 西安交通大学 |
| 推荐引用方式 GB/T 7714 | Han, Xiaowei,Jia, Qian,Sun, Hongbin,et al. A 0.13μm 64Mb HfOxReRAM using configurable ramped voltage write and low read-disturb sensing techniques for reliability improvement[C]. 见:. |
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