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CORC

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Field-Free 3T2SOT MRAM for Non-Volatile Cache Memories 期刊论文
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2020, 卷号: 67, 期号: 12, 页码: 4660-4669
作者:  Wu, Bi;  Wang, Chao;  Wang, Zhaohao;  Wang, Ying;  Zhang, Deming
收藏  |  浏览/下载：42/0  |  提交时间：2021/12/01
Field-Free Switching of a Spin-Orbit-Torque Device Through Interlayer-Coupling-Induced Domain Walls 期刊论文
PHYSICAL REVIEW APPLIED, 2020, 卷号: 13, 期号: 4, 页码: 10
作者:  Zhao, Xiaotian;  Ji, Lianze;  Liu, Wei;  Li, Shangkun;  Liu, Long
收藏  |  浏览/下载：38/0  |  提交时间：2021/02/02
Heavy ion irradiation induced hard error in MTJ of the MRAM memory array 期刊论文
MICROELECTRONICS RELIABILITY, 2019, 卷号: 100, 页码: 7
作者:  Zhao, P. X.;  Liu, T. Q.;  Cai, C.;  Li, D. Q.;  Ji, Q. G.
收藏  |  浏览/下载：7/0  |  提交时间：2022/01/19
An Adaptive Thermal-Aware ECC Scheme for Reliable STT-MRAM LLC Design 期刊论文
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2019, 卷号: 27, 期号: 8, 页码: 1851-1860
作者:  Wu, Bi;  Zhang, Beibei;  Cheng, Yuanqing;  Wang, Ying;  Liu, Dijun
收藏  |  浏览/下载：70/0  |  提交时间：2019/12/10
Lowering critical current density for spin-orbit torque induced magnetization switching by ion irradiation 期刊论文
APPLIED PHYSICS LETTERS, 2019, 卷号: 115, 期号: 3, 页码: 5
作者:  Yun, Jijun;  Xi, Li;  Liu, Jie;  Zhang, Shengxia;  Chang, Meixia
收藏  |  浏览/下载：43/0  |  提交时间：2019/11/10
Non-volatility using materials with only volatile properties: Vertically integrated magnetoelectric heterostructures and their potential for multi-level-cell devices 期刊论文
APPLIED PHYSICS LETTERS, 2019, 卷号: 114, 期号: 24
作者:  Tang, Xiao;  Gao, Min;  Leung, Chung Ming;  Luo, Haosu;  Li, Jiefang
收藏  |  浏览/下载：36/0  |  提交时间：2019/12/26
Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits 期刊论文
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2019, 卷号: 27, 期号: 1, 页码: 159-172
作者:  Chen, Xiaoming;  Niemier, Michael;  Hu, Xiaobo Sharon;  Yin, Xunzhao
收藏  |  浏览/下载：71/0  |  提交时间：2019/04/03
Novel Radiation Hardening Read/Write Circuits Using Feedback Connections for Spin-Orbit Torque Magnetic Random Access Memory 期刊论文
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2019, 卷号: 66, 页码: 1853-1862
作者:  Wang, Bi;  Wang, Zhaohao;  Wu, Bi;  Bai, Yumeng;  Cao, Kaihua
收藏  |  浏览/下载：22/0  |  提交时间：2019/12/30
Stability and Variability Emphasized STT-MRAM Sensing Circuit with Performance Enhancement 会议论文
2018 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2018, 2018-10-26
作者:  Han, M.;  Cai, H.;  Yang, J.;  Naviner, L.;  Wang, Y.
收藏  |  浏览/下载：11/0  |  提交时间：2019/12/30
Spintronic Processing Unit in Spin Transfer Torque Magnetic Random Access Memory 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 卷号: 66, 页码: 2017-2022
作者:  Zhang, He;  Kang, Wang;  Cao, Kaihua;  Wu, Bi;  Zhang, Youguang
收藏  |  浏览/下载：28/0  |  提交时间：2019/12/30

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