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北京大学 [7]
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苏州纳米技术与纳米仿... [1]
安徽大学 [1]
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期刊论文 [10]
其他 [3]
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Compact Model for Double-Gate Tunnel FETs With Gate-Drain Underlap
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 期号: 12, 页码: 5242-5248
作者:
Xu, Peng
;
Lou, Haijun
;
Zhang, Lining
;
Yu, Zhonghua
;
Lin, Xinnan
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/11/15
Ambipolar current
compact model
gate-drainunderlap
tunneling field-effect transistor (TFET)
Compact Model for Double-Gate Tunnel FETs with Gate-Drain Underlap
期刊论文
IEEE Transactions on Electron Devices, 2017, 卷号: 64, 期号: 12, 页码: 5242-5248
作者:
Xu, Peng
;
Lou, Haijun
;
Zhang, Lining
;
Yu, Zhonghua
;
Lin, Xinnan
收藏
  |  
浏览/下载:0/0
  |  
提交时间:2020/11/14
Capacitance
SPICE
Tunnel field effect transistors
Ambipolar currents
Compact model
Double gate tunnel fets
Doublegate tunnel fets (DG-TFET)
Effective resistances
Electrical characteristic
Gate drain
Tunneling field-effect transistors
Two-dimensional analytical model of double-gate tunnel FETs with interface trapped charges including effects of channel mobile charge carriers
期刊论文
Journal of Semiconductors, 2017, 卷号: Vol.38 No.2, 页码: 024004
作者:
Dai,Yuehua
;
Xu,Huifang
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/04/22
FIELD-EFFECT TRANSISTOR
Diamond based field-effect transistors with SiNX and ZrO2 double dielectric layers
期刊论文
DIAMOND AND RELATED MATERIALS, 2016, 卷号: 69
作者:
Wang, W
;
Fu, K(付凯)
;
Hu, C
;
Li, FN
;
Liu, ZC
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2017/03/11
A closed-form capacitance model for tunnel FETs with explicit surface potential solutions
期刊论文
应用物理杂志, 2014
Wang, Jiaxin
;
Wu, Chunlei
;
Huang, Qianqian
;
Wang, Chao
;
Huang, Ru
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  |  
浏览/下载:5/0
  |  
提交时间:2015/11/10
FIELD-EFFECT TRANSISTORS
PARASITIC CAPACITANCES
FRINGE CAPACITANCE
GATE DIELECTRICS
MOS-TRANSISTOR
CMOS DEVICE
MOSFETS
SOI
PERFORMANCE
IMPACT
Simulation Study of Quasi-Ballistic Transport in Asymmetric DG-MOSFET by Directly Solving Boltzmann Transport Equation
其他
2013-01-01
Liu, Gai
;
Du, Gang
;
Lu, Tiao
;
Liu, Xiaoyan
;
Zhang, Pingwen
;
Zhang, Xing
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2015/11/10
Boltzmann transport equation (BTE)
double-gate FETs
numerical simulation
quasi-ballistic transport
BACKSCATTERING COEFFICIENT EXTRACTION
NANOSCALE MOSFETS
POISSON SYSTEM
MONTE-CARLO
WENO-SOLVER
TRANSISTORS
MOBILITY
DEVICES
MODEL
A comparative study on SWCNT and DWCNT field-effect transistors
期刊论文
journal of nanoscience and nanotechnology, 2007
Liang, X. L.
;
Wang, S.
;
Duan, X. J.
;
Zhang, Z. Y.
;
Chen, Q.
;
Zhang, J.
;
Peng, L.M.
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2015/11/14
SWCNT
DWCNT
FETs
intershell interaction
WALLED CARBON NANOTUBES
CIRCUITS
Fabrication and properties of double gated double walled carbon nanotube field effect transistors
期刊论文
zhenkong kexue yu jishu xuebaojournal of vacuum science and technology, 2006
Zhang, Zhenyu
;
Wang, Sheng
;
Liang, Xuelei
;
Chen, Qing
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2015/11/17
Highly scaled CMOS device technologies with new structures and new materials
其他
2006-01-01
Wang, Yangyuan
;
Huang, Ru
;
Kang, Jinfeng
;
Zhang, Shengdong
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2015/11/13
HOT-CARRIER RELIABILITY
METAL-GATE
PERFORMANCE
MOSFET
INTEGRATION
DESIGN
FINFET
HFO2
Highly scaled CMOS device technologies with new structures and new materials
其他
2006-01-01
Wang, Y.
;
Huang, R.U.
;
Kang, J.
;
Zhang, S.
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/13
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