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MgXN2 (X = Hf/Zr) Monolayers: Auxetic Semiconductor with Highly Anisotropic Optical/Mechanical Properties and Carrier Mobility br
期刊论文
JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2022
作者:
Li, Pengfei
;
Xu, Yuehua
;
Liang, Changhao
;
Zeng, Xiao Cheng
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2022/12/23
Insight into electronic structure and photocatalytic character of GaSe/MoS2 heterostructure by first-principles investigation
期刊论文
Solid State Communications, 2022, 卷号: 353
作者:
Lu, Xuefeng
;
Cui, Tingshu
;
Ren, Junqiang
;
Guo, Xin
;
Xue, Hongtao
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2022/08/09
Binding energy
Calculations
Energy gap
Gallium compounds
Hydrogen production
Lattice mismatch
Layered semiconductors
Light
Light absorption
Molybdenum compounds
Photocatalytic activity
Redox reactions
Selenium compounds
Semiconductor quantum wells
Electronic.structure
First principle calculations
First principles
First-principles investigations
Gase/MoS2
Photo-catalytic
Photocatalytic character
Photocatalytic property
Structure property
Two-dimensional
Electrically and Magnetically Tunable Valley Polarization in Monolayer MoSe2 Proximitized by a 2D Ferromagnetic Semiconductor
期刊论文
ADVANCED FUNCTIONAL MATERIALS, 2022, 页码: 7
作者:
Zhang, Tongyao
;
Zhao, Siwen
;
Wang, Anran
;
Xiong, Zhiren
;
Liu, Yingjia
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  |  
浏览/下载:24/0
  |  
提交时间:2022/07/14
heterostructures
transition metal dichalcogenides
two-dimensional ferromagnetic semiconductors
valley polarization
A class of finite element methods with averaging techniques for solving the three-dimensional drift-diffusion model in semiconductor device simulations
期刊论文
JOURNAL OF COMPUTATIONAL PHYSICS, 2022, 卷号: 458, 页码: 24
作者:
Zhang, Qianru
;
Wang, Qin
;
Zhang, Linbo
;
Lu, Benzhuo
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  |  
浏览/下载:8/0
  |  
提交时间:2023/02/07
Three-dimensional drift -diffusion model
Averaging technique
Finite element method
Semiconductor device
Semiconductor-metal transition in lead iodide under pressure
期刊论文
APPLIED PHYSICS LETTERS, 2022, 卷号: 120
作者:
Cheng, Peng
;
Wang, Yunfeng
;
Ye, Tingting
;
Chu, Lingqiao
;
Yang, Jin
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  |  
浏览/下载:20/0
  |  
提交时间:2022/12/23
Carrier Trapping in Wrinkled 2D Monolayer MoS2 for Ultrathin Memory
期刊论文
ACS NANO, 2022, 卷号: 16, 期号: 4, 页码: 6309-6316
作者:
Zhang, Rongjie
;
Lai, Yongjue
;
Chen, Wenjun
;
Teng, Changjiu
;
Sun, Yujie
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  |  
浏览/下载:14/0
  |  
提交时间:2022/09/16
 
2D materials
monolayer
MoS 2
wrinkles
memory
carrier trapping
conductive AFM
Phonon-mediated superconductivity in two-dimensional hydrogenated phosphorus carbide: HPC3
期刊论文
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2022, 卷号: 24
作者:
Li, Ya-Ping
;
Yang, Liu
;
Liu, Hao-Dong
;
Jiao, Na
;
Ni, Mei-Yan
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  |  
浏览/下载:22/0
  |  
提交时间:2022/05/16
Manipulation of Subwavelength Periodic Structures Formation on 4H-SiC Surface with Three Temporally Delayed Femtosecond Laser Irradiations
期刊论文
Nanomaterials, 2022, 卷号: 12, 期号: 5, 页码: 10
作者:
W. L. He
;
B. Zhao
;
J. J. Yang
;
J. Q. Wen
;
H. Wu
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2023/06/14
Hybrid Ga2O3/AlGaN/GaN Ultraviolet Detector With Gate Metal in the Grooved AlGaN Layer for Obtaining Low Dark Current and Large Detectivity
期刊论文
Ieee Transactions on Electron Devices, 2022, 卷号: 69, 期号: 11, 页码: 6166-6170
作者:
Z. P. Liu
;
C. S. Chu
;
B. X. Wang
;
G. S. Huang
;
K. Jiang
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2023/06/14
Development and Future of Vertical Cavity Surface Emitting Lasers Operated at High Temperatures (Invited)
期刊论文
Guangzi Xuebao/Acta Photonica Sinica, 2022, 卷号: 51, 期号: 2
作者:
J. Zhang
;
Y. Ning
;
X. Zhang
;
Y. Zhou
;
C. Chen
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2023/06/14
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