CORC

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CORC

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Recrystallization effects in GeV Bi ion implanted 4H-SiC Schottky barrier diode investigated by cross-sectional Micro-Raman spectroscopy 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2020, 卷号: 478, 页码: 5-10
作者:  Huang, Mingmin;  Yang, Zhimei;  Wang, Shaomin;  Liu, Jiyuan;  Gong, Min
收藏  |  浏览/下载：26/0  |  提交时间：2021/12/15
High-voltage vertical GaN-on-GaN Schottky barrier diode using fluorine ion implantation treatment 期刊论文
AIP ADVANCES, 2019, 卷号: 9, 期号: 5
作者:  Liu, Zirui;  Wang, Jianfeng;  Gu, Hong;  Zhang, Yumin;  Wang, Weifan
收藏  |  浏览/下载：111/0  |  提交时间：2019/12/26
Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode 期刊论文
Chinese Physics B, 2019, 卷号: Vol.28 No.2, 页码: 027303
作者:  Jin-Lan Li;  Yun Li;  Ling Wang;  Yue Xu;  Feng Yan
收藏  |  浏览/下载：8/0  |  提交时间：2019/12/17
Performance degradation and defect characterization of Ni/4H-SiC Schottky diode neutron detector in high fluence rate neutron irradiation 期刊论文
DIAMOND AND RELATED MATERIALS, 2018, 卷号: 88, 页码: 256-261
作者:  Liu, L. Y.;  Shen, T. L.;  Liu, A.;  Zhang, T.;  Bai, S.
收藏  |  浏览/下载：20/0  |  提交时间：2019/12/20
Performance degradation and defect characterization of Ni/4H-SiC Schottky diode neutron detector in high fluence rate neutron irradiation 期刊论文
DIAMOND AND RELATED MATERIALS, 2018, 卷号: 88, 页码: 256-261
作者:  Liu, LY;  Shen, TL
收藏  |  浏览/下载：13/0  |  提交时间：2018/10/22
Performance degradation and defect characterization of Ni/4H-SiC Schottky diode neutron detector in high fluence rate neutron irradiation 期刊论文
DIAMOND AND RELATED MATERIALS, 2018, 卷号: 88, 页码: 256-261
作者:  Liu, L. Y.;  Shen, T. L.;  Liu, A.;  Zhang, T.;  Bai, S.
收藏  |  浏览/下载：2/0  |  提交时间：2019/11/26
Silicon carbide PIN diode detectors used in harsh neutron irradiation 期刊论文
SENSORS AND ACTUATORS A-PHYSICAL, 2018, 卷号: 280, 页码: 245-251
作者:  Jin, P;  Liu, LY;  Li, FP;  Bai, S;  Cao, XZ
收藏  |  浏览/下载：25/0  |  提交时间：2019/09/24
The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm(2) 期刊论文
SENSORS, 2017, 卷号: 17
作者:  Liu, Lin-Yue;  Wang, Ling;  Jin, Peng;  Liu, Jin-Liang;  Zhang, Xian-Peng
收藏  |  浏览/下载：5/0  |  提交时间：2019/11/26
SiC power MOSFET with monolithically integrated Schottky barrier diode for improved switching performances 会议论文
Nuremberg, Germany, 2017-05-16
作者:  Dai, Xiaoping;  Jiang, Huaping;  Zheng, Changwei;  Ke, Maolong
收藏  |  浏览/下载：11/0  |  提交时间：2018/03/07
gamma-ray detector based on n-type 4H-SiC Schottky barrier diode 期刊论文
ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 20
作者:  Du YY(杜园园);  Zhang CL(张春雷);  Cao XL(曹学蕾);  Du, YY;  Zhang, CL
收藏  |  浏览/下载：51/0  |  提交时间：2017/07/26

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