Performance degradation and defect characterization of Ni/4H-SiC Schottky diode neutron detector in high fluence rate neutron irradiation

doi:10.1016/j.diamond.2018.07.019

CORC > 合肥物质科学研究院 > 中国科学院合肥物质科学研究院 > 中科院固体物理研究所

	Performance degradation and defect characterization of Ni/4H-SiC Schottky diode neutron detector in high fluence rate neutron irradiation
	Liu, L. Y.4,5; Shen, T. L.6; Liu, A.7; Zhang, T.2; Bai, S.7; Xu, S. R.1; Jin, P.5; Hao, Y.1; Ouyang, X. P.3,4,5
刊名	DIAMOND AND RELATED MATERIALS
	2018-09-01
卷号	88 页码:256-261
关键词	Silicon carbide Neutron detector Performance degradation Irradiation defect
ISSN号	0925-9635
DOI	10.1016/j.diamond.2018.07.019
通讯作者	Liu, L. Y.(liulinyue@nint.ac.cn)
英文摘要	A long-standing objective in neutron detection is to develop high-quality detectors with good radiation resistance; silicon carbide (SiC) detectors are considered to be good options. Although SiC neutron detectors have been successfully developed, the performance of SiC detectors leave much to be desired: performance degradation is inevitable in neutron irradiation and becomes serious above the neutron fluence of 10(14) n/cm(2) (Dulloo et al., 1999, 1997; Wu et al., 2014; Nava et al., 2006; Sze and Ng, n.d.; Liu et al., 2017). The defects induced in the depletion region of SiC detector were generally considered to be responsible for it, but after analyzing performance degradation and characterizing radiation defects of Ni/4H-SiC Schottky diode detectors, which were irradiated in Xi'an pulsed reactor with a fluence rate of 2.05 x 10(13) n/cm(2) s and a total radiation fluence of 2.1 x 10(16) n/cm(2) (mixture of thermal and fast neutrons), it is found that interface performance degradation of nickel electrode and SiC epitaxial layer induced by neutron irradiation can also influence its performance. Thus the design of SiC neutron detectors should not only pay attention to the quality of the detector's sensitive layer (SiC epitaxial layer) but also consider radiation effects on the interface between electrode and SiC epitaxial layer, which has significant importance for improving performance of SiC neutron detectors and extend their application to intense radiation fields.
资助项目	National Natural Science Foundation of China[11605140] ; National Natural Science Foundation of China[11435010] ; National Natural Science Foundation of China[61504099]
WOS关键词	CARBIDE SEMICONDUCTOR-DETECTORS ; SILICON ; PHOTOLUMINESCENCE ; MICROSCOPY ; EVOLUTION ; BORON
WOS研究方向	Materials Science ; Physics
语种	英语
出版者	ELSEVIER SCIENCE SA
WOS记录号	WOS:000445719300032
资助机构	National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/39138]
专题	合肥物质科学研究院_中科院固体物理研究所
通讯作者	Liu, L. Y.
作者单位	1.Xidian Univ, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Shaanxi, Peoples R China 2.Chinese Acad Sci, Inst Solid State Phys, Hefei 230031, Anhui, Peoples R China 3.Xijing Univ, Shaanxi Engn Res Ctr Pulse Source & Its Applicat, Xian 710023, Shaanxi, Peoples R China 4.Xi An Jiao Tong Univ, Sch Nucl Sci & Technol, 28 Xianning West Rd, Xian 710049, Shaanxi, Peoples R China 5.Northwest Inst Nucl Technol, State Key Lab Intense Pulsed Radiat Simulat & Eff, Xian 710024, Shaanxi, Peoples R China 6.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China 7.Nanjing Elect Devices Inst, Bldg 03,8 Xingwen Rd, Nanjing 210016, Jiangsu, Peoples R China
推荐引用方式 GB/T 7714	Liu, L. Y.,Shen, T. L.,Liu, A.,et al. Performance degradation and defect characterization of Ni/4H-SiC Schottky diode neutron detector in high fluence rate neutron irradiation[J]. DIAMOND AND RELATED MATERIALS,2018,88:256-261.
APA	Liu, L. Y..,Shen, T. L..,Liu, A..,Zhang, T..,Bai, S..,...&Ouyang, X. P..(2018).Performance degradation and defect characterization of Ni/4H-SiC Schottky diode neutron detector in high fluence rate neutron irradiation.DIAMOND AND RELATED MATERIALS,88,256-261.
MLA	Liu, L. Y.,et al."Performance degradation and defect characterization of Ni/4H-SiC Schottky diode neutron detector in high fluence rate neutron irradiation".DIAMOND AND RELATED MATERIALS 88(2018):256-261.