Silicon carbide PIN diode detectors used in harsh neutron irradiation

doi:10.1016/j.sna.2018.07.053

	Silicon carbide PIN diode detectors used in harsh neutron irradiation
	Jin, P; Liu, LY; Li, FP; Bai, S; Cao, XZ; Ouyang, XP; Cao XZ(曹兴忠)
刊名	SENSORS AND ACTUATORS A-PHYSICAL
	2018
卷号	280 页码:245-251
关键词	Silicon carbide Neutron detector Performance degradation Irradiation defect
ISSN号	0924-4247
DOI	10.1016/j.sna.2018.07.053
文献子类	Article
英文摘要	Silicon carbide (SiC) neutron detectors based on PIN diode with Ti/Au electrode structure have been successfully developed and considered to be a good option for neutron detection related to harsh radiation environment, but these detectors suffered inevitable irradiation damage and performance degradation, ultimately damaged the applications severely. Unfortunately, the systematic research focusing on the degradation and irradiation defects is lack, and the mechanism of degradation is not clear yet. In this paper, these issues are carefully studied: SiC detectors were irradiated by neutrons emitted from fusion neutron generator and nuclear reactor with fluence ranging from 1 x 10(14) n/cm(2) to 2 x 10(16) n/cm(2), then the performance degradation and neutron induced defects were carefully investigated. It is concluded that the SiC detectors could endure neutron irradiation as least 10(16) n/cm(2). Although neutron irradiation could induce breakdown of PN junction, decrease of charge collection efficiency and worsening of energy resolution, all the detectors are still alive; furthermore, they could still acquire integrated response spectra to alpha particles with neglectable increase of dark current at neutron fluence of 2 x 10(16) n/cm(2). The di-carbon antisite defects and vacancy-type defects induced by neutron irradiation should be responsible for the performance degradation, according to low temperature photoluminescence and positron annihilation Doppler broadening measurements. Possible degradation mechanism was discussed as well. (C) 2018 Elsevier B.V. All rights reserved.
WOS关键词	4H-SIC SCHOTTKY DIODES ; RADIATION
WOS研究方向	Engineering ; Instruments & Instrumentation
语种	英语
WOS记录号	WOS:000447097200031
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/286407]
专题	高能物理研究所_多学科研究中心
通讯作者	Cao XZ(曹兴忠)
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Jin, P,Liu, LY,Li, FP,et al. Silicon carbide PIN diode detectors used in harsh neutron irradiation[J]. SENSORS AND ACTUATORS A-PHYSICAL,2018,280:245-251.
APA	Jin, P.,Liu, LY.,Li, FP.,Bai, S.,Cao, XZ.,...&曹兴忠.(2018).Silicon carbide PIN diode detectors used in harsh neutron irradiation.SENSORS AND ACTUATORS A-PHYSICAL,280,245-251.
MLA	Jin, P,et al."Silicon carbide PIN diode detectors used in harsh neutron irradiation".SENSORS AND ACTUATORS A-PHYSICAL 280(2018):245-251.