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Ultrathin flexible InGaZnO transistor for implementing multiple functions with a very small circuit footprint
期刊论文
NANO RESEARCH, 2020, 卷号: 14, 期号: 1, 页码: 232-238
作者:
Dai, Chaoqi
;
Chen, Peiqin
;
Qi, Shaocheng
;
Hu, Yongbin
;
Song, Zhitang
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2020/12/16
LOGIC GATES
MEMORY
FILM
REALIZATION
Defect Self-Compensation for High-Mobility Bilayer InGaZnO/In2O3 Thin-Film Transistor
期刊论文
ADVANCED ELECTRONIC MATERIALS, 2019, 卷号: 5, 期号: 6
作者:
He, Jiawei
;
Li, Guoli
;
Lv, Yawei
;
Wang, Chunlan
;
Liu, Chuansheng
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  |  
浏览/下载:28/0
  |  
提交时间:2019/12/05
amorphous oxide semiconductor
bilayer stack
defect self-compensation
high mobility
thin-film transistor
Defect Self-Compensation for High-Mobility Bilayer InGaZnO/In2O3 Thin-Film Transistor
期刊论文
Advanced Electronic Materials, 2019, 卷号: 5, 期号: 6
作者:
He, Jiawei
;
Li, Guoli
;
Lv, Yawei
;
Wang, Chunlan
;
Liu, Chuansheng
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  |  
浏览/下载:14/0
  |  
提交时间:2019/12/05
Low-Voltage, Flexible InGaZnO Thin-Film Transistors Gated With Solution-Processed, Ultra-Thin AlxOy
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 1, 页码: 36-39
作者:
Cai, Wensi
;
Wilson, Joshua
;
Zhang, Jiawei
;
Park, Seonghyun
;
Majewski, Leszek
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  |  
浏览/下载:46/0
  |  
提交时间:2019/12/11
Indium-gallium-zinc-oxide
thin-film transistors (TFTs)
plastic
substrate
1 V operation
Low-temperature fabrication of HfAlO alloy dielectric using atomic-layer deposition and its application in a low-power device
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 792, 页码: 543-549
作者:
Ma, Pengfei
;
Sun, Jiamin
;
Zhang, Guanqun
;
Liang, Guangda
;
Xin, Qian
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  |  
浏览/下载:14/0
  |  
提交时间:2019/12/11
HfAlO
High-k
Gate insulator
A-InGaZnO
Thin-film transistor
Atomic
layer deposition
Low-power device
Defect Self-Compensation for High-Mobility Bilayer InGaZnO/In2O3 Thin-Film Transistor
期刊论文
ADVANCED ELECTRONIC MATERIALS, 2019, 卷号: Vol.5 No.6
作者:
He, JW
;
Li, GL
;
Lv, YW
;
Wang, CL
;
Liu, CS
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  |  
浏览/下载:3/0
  |  
提交时间:2019/12/17
amorphous oxide semiconductor
bilayer stack
defect self-compensation
high mobility
thin-film transistor
Aqueous Solution Induced High-Dielectric-Constant AlOx : Y Films for Thin-Film Transistor Applications
期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7566-7572
作者:
Liang, Lingyan
;
Wu, Weihua
;
Cao, Hongtao
;
Lan, Linfeng
;
Yao, Meiyi
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  |  
浏览/下载:29/0
  |  
提交时间:2018/12/04
Amorphous Oxide Semiconductors
Field-effect Transistors
Low-temperature
Gate Dielectrics
Low-voltage
Photochemical Activation
Electrical Performance
Combustion Synthesis
High-mobility
Electronics
Aqueous Solution Induced High-Dielectric-Constant AlOx : Y Films for Thin-Film Transistor Applications
期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7566-7572
作者:
Wu, Weihua
;
Liang, Yu
;
Cao, Hongtao
;
Lan, Linfeng
;
Yao, Meiyi
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2018/12/04
Amorphous Oxide Semiconductors
Field-effect Transistors
Low-temperature
Gate Dielectrics
Low-voltage
Photochemical Activation
Electrical Performance
Combustion Synthesis
High-mobility
Electronics
Oxygen partial pressure ratio modulated electrical performance of amorphous InGaZnO thin film transistor and inverter
期刊论文
Journal of Alloys and Compounds, 2018
作者:
Q.B. Lin
;
C. Zhang
;
G. He
;
B. Yang
;
L. Zhu
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/04/22
Sputtering
Oxygen
partial
pressure
ratio
α-IGZO
Thin
film
transistors
Inverter
Optimization of annealing conditions in air for InGaZnO thin-film transistors by temperature-stress studies
期刊论文
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2018, 卷号: 12, 页码: 407-412
作者:
Qin, Cunping[1]
;
Yang, Jun[2]
;
Wang, Bowen[3]
;
Xu, Tao[4]
;
Ding, Xingwei[5]
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/04/22
InGaZnO TFTs
Temperature-stress studies
Density -of-states
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