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	Oxygen partial pressure ratio modulated electrical performance of amorphous InGaZnO thin film transistor and inverter
	Q.B. Lin; C. Zhang; G. He; B. Yang; L. Zhu; Y.C. Zhang; X.S. Jiang
刊名	Journal of Alloys and Compounds
	2018
关键词	Sputtering Oxygen partial pressure ratio α-IGZO Thin film transistors Inverter
ISSN号	0925-8388
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2156949
专题	安徽大学
作者单位	1.a School of Electronics and Electrical Engineering, Chuzhou University, Chuzhou 239000, PR China 2.School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230039, PR China
推荐引用方式 GB/T 7714	Q.B. Lin,C. Zhang,G. He,et al. Oxygen partial pressure ratio modulated electrical performance of amorphous InGaZnO thin film transistor and inverter[J]. Journal of Alloys and Compounds,2018.
APA	Q.B. Lin.,C. Zhang.,G. He.,B. Yang.,L. Zhu.,...&X.S. Jiang.(2018).Oxygen partial pressure ratio modulated electrical performance of amorphous InGaZnO thin film transistor and inverter.Journal of Alloys and Compounds.
MLA	Q.B. Lin,et al."Oxygen partial pressure ratio modulated electrical performance of amorphous InGaZnO thin film transistor and inverter".Journal of Alloys and Compounds (2018).

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