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	Defect Self-Compensation for High-Mobility Bilayer InGaZnO/In2O3 Thin-Film Transistor
	He, Jiawei; Li, Guoli; Lv, Yawei; Wang, Chunlan; Liu, Chuansheng; Li, Jinchai; Flandre, Denis; Chen, Huipeng; Guo, Tailiang; Liao, Lei
刊名	Advanced Electronic Materials
	2019
卷号	5期号:6
DOI	10.1002/aelm.201900125
URL标识	查看原文
收录类别	EI
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4240219
专题	武汉大学
推荐引用方式 GB/T 7714	He, Jiawei,Li, Guoli,Lv, Yawei,et al. Defect Self-Compensation for High-Mobility Bilayer InGaZnO/In2O3 Thin-Film Transistor[J]. Advanced Electronic Materials,2019,5(6).
APA	He, Jiawei.,Li, Guoli.,Lv, Yawei.,Wang, Chunlan.,Liu, Chuansheng.,...&Liao, Lei.(2019).Defect Self-Compensation for High-Mobility Bilayer InGaZnO/In2O3 Thin-Film Transistor.Advanced Electronic Materials,5(6).
MLA	He, Jiawei,et al."Defect Self-Compensation for High-Mobility Bilayer InGaZnO/In2O3 Thin-Film Transistor".Advanced Electronic Materials 5.6(2019).

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