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Low-Voltage, Flexible InGaZnO Thin-Film Transistors Gated With Solution-Processed, Ultra-Thin AlxOy
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 1, 页码: 36-39
作者:
Cai, Wensi
;
Wilson, Joshua
;
Zhang, Jiawei
;
Park, Seonghyun
;
Majewski, Leszek
收藏
  |  
浏览/下载:46/0
  |  
提交时间:2019/12/11
Indium-gallium-zinc-oxide
thin-film transistors (TFTs)
plastic
substrate
1 V operation
Optimization of annealing conditions in air for InGaZnO thin-film transistors by temperature-stress studies
期刊论文
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2018, 卷号: 12, 页码: 407-412
作者:
Qin, Cunping[1]
;
Yang, Jun[2]
;
Wang, Bowen[3]
;
Xu, Tao[4]
;
Ding, Xingwei[5]
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/04/22
InGaZnO TFTs
Temperature-stress studies
Density -of-states
Oxygen Interstitial Creation in a-IGZO Thin-Film Transistors Under Positive Gate-Bias Stress
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017
Zhou, Xiaoliang
;
Shao, Yang
;
Zhang, Letao
;
Lu, Huiling
;
He, Hongyu
;
Han, Dedong
;
Wang, Yi
;
Zhang, Shengdong
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2017/12/03
Amorphous oxide semiconductor
thin-film transistors
reliability
positive gate-bias stress
defect creation
Source-drain resistance characteristics of back-channel etched amorphous InGaZnO thin film transistors with TiO2:Nb protective layer
期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017
Zhang, Letao
;
Zhou, Xiaoliang
;
Chang, Baozhu
;
Wang, Longyan
;
Xiao, Yuxiang
;
He, Hongyu
;
Zhang, Shengdong
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2017/12/03
Amorphous indium gallium zinc oxide
Thin film transistors
Source-drain parasitic resistance
TiO2:Nb
Films thickness
THRESHOLD VOLTAGE
ANATASE TIO2
PERFORMANCE
SHIFT
TFTS
Investigating degradation behaviors induced by mobile Cu ions under high temperature negative bias stress in a-InGaZnO thin film transistors
期刊论文
APPLIED PHYSICS LETTERS, 2017
Chiang, Hsiao-Cheng
;
Chang, Ting-Chang
;
Liao, Po-Yung
;
Chen, Bo-Wei
;
Tsao, Yu-Ching
;
Tsai, Tsung-Ming
;
Chien, Yu-Chieh
;
Yang, Yi-Chieh
;
Chen, Kuan-Fu
;
Yang, Chung-I
;
Hung, Yu-Ju
;
Chang, Kuan-Chang
;
Zhang, Sheng-Dong
;
Lin, Sung-Chun
;
Yeh, Cheng-Yen
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2017/12/03
IGZO TFTS
ZNO-CU
SEMICONDUCTORS
TRANSITIONS
IMPURITIES
OXIDE
SHIFT
Oxygen Adsorption Effect of Amorphous InGaZnO Thin-Film Transistors
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017
Zhou, Xiaoliang
;
Shao, Yang
;
Zhang, Letao
;
Xiao, Xiang
;
Han, Dedong
;
Wang, Yi
;
Zhang, Shengdong
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2017/12/03
Amorphous oxide semiconductor
thinfilm transistors
oxygen adsorption
surface-state model
OXIDE
ZNO
WATER
Nb Doped TiO2 Protected Back-Channel-Etched Amorphous InGaZnO Thin Film Transistors
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017
Zhang, Letao
;
Zhou, Xiaoliang
;
Yang, Huan
;
He, Hongyu
;
Wang, Longyan
;
Zhang, Min
;
Zhang, Shengdong
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
Amorphous indium gallium zinc oxide (a-IGZO)
thin film transistors (TFTs)
back-channel-etch (BCE) process
Nb doped TiO2
THRESHOLD VOLTAGE
CARBON-NANOFILM
BARRIER LAYER
PERFORMANCE
SHIFT
Low-Frequency Noise in High-Mobility a-InGaZnO/InSnO Nanowire Composite Thin-Film Transistors
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017, 卷号: 38, 页码: 1540-1542
作者:
Wan, Da
;
Abliz, Ablat
;
Su, Meng
;
Liu, Chuangsheng
;
Jiang, Changzhong
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/11/21
Amorphous indium-gallium-zinc-oxide (a-InGaZnO)
1/f noise model
thin-film transistors (TFTs)
indium-tin-oxide (ITO) nanowire (NW)
low-frequency noise (LFN)
A comparison of density of states between InGaZnO based TFTs and InZnO based TFTs
期刊论文
MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2017, 卷号: 651, 页码: 221-227
作者:
Huang, Chuan-Xin[1]
;
Li, Jun[2]
;
Zhu, Wen-Qing[3]
;
Zhang, Jian-Hua[4]
;
Jiang, Xue-Yin[5]
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/04/24
ALD Al2O3
DOSs
oxide semiconductor
transistor
TiSiOx gate dielectrics produced by reactive sputtering for high performance InGaZnO thin film transistors
期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017, 卷号: 61, 页码: 125-130
作者:
Fu, Yi-Zhou[1]
;
Li, Jun[2]
;
Zhao, Cheng-Yu[3]
;
Huang, Chuan-Xin[4]
;
Zhang, Jian-Hua[5]
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2019/04/24
Oxygen partial pressure
TiSiOx gate insulator
InGaZnO-TFTs
Density of states
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