CORC

浏览/检索结果: 共21条,第1-10条 帮助

已选(0)清除 条数/页:   排序方式:
Low-Voltage, Flexible InGaZnO Thin-Film Transistors Gated With Solution-Processed, Ultra-Thin AlxOy 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 1, 页码: 36-39
作者:  Cai, Wensi;  Wilson, Joshua;  Zhang, Jiawei;  Park, Seonghyun;  Majewski, Leszek
收藏  |  浏览/下载:46/0  |  提交时间:2019/12/11
Optimization of annealing conditions in air for InGaZnO thin-film transistors by temperature-stress studies 期刊论文
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2018, 卷号: 12, 页码: 407-412
作者:  Qin, Cunping[1];  Yang, Jun[2];  Wang, Bowen[3];  Xu, Tao[4];  Ding, Xingwei[5]
收藏  |  浏览/下载:5/0  |  提交时间:2019/04/22
Oxygen Interstitial Creation in a-IGZO Thin-Film Transistors Under Positive Gate-Bias Stress 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017
Zhou, Xiaoliang; Shao, Yang; Zhang, Letao; Lu, Huiling; He, Hongyu; Han, Dedong; Wang, Yi; Zhang, Shengdong
收藏  |  浏览/下载:7/0  |  提交时间:2017/12/03
Source-drain resistance characteristics of back-channel etched amorphous InGaZnO thin film transistors with TiO2:Nb protective layer 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017
Zhang, Letao; Zhou, Xiaoliang; Chang, Baozhu; Wang, Longyan; Xiao, Yuxiang; He, Hongyu; Zhang, Shengdong
收藏  |  浏览/下载:7/0  |  提交时间:2017/12/03
Investigating degradation behaviors induced by mobile Cu ions under high temperature negative bias stress in a-InGaZnO thin film transistors 期刊论文
APPLIED PHYSICS LETTERS, 2017
Chiang, Hsiao-Cheng; Chang, Ting-Chang; Liao, Po-Yung; Chen, Bo-Wei; Tsao, Yu-Ching; Tsai, Tsung-Ming; Chien, Yu-Chieh; Yang, Yi-Chieh; Chen, Kuan-Fu; Yang, Chung-I; Hung, Yu-Ju; Chang, Kuan-Chang; Zhang, Sheng-Dong; Lin, Sung-Chun; Yeh, Cheng-Yen
收藏  |  浏览/下载:6/0  |  提交时间:2017/12/03
Oxygen Adsorption Effect of Amorphous InGaZnO Thin-Film Transistors 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017
Zhou, Xiaoliang; Shao, Yang; Zhang, Letao; Xiao, Xiang; Han, Dedong; Wang, Yi; Zhang, Shengdong
收藏  |  浏览/下载:2/0  |  提交时间:2017/12/03
Nb Doped TiO2 Protected Back-Channel-Etched Amorphous InGaZnO Thin Film Transistors 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017
Zhang, Letao; Zhou, Xiaoliang; Yang, Huan; He, Hongyu; Wang, Longyan; Zhang, Min; Zhang, Shengdong
收藏  |  浏览/下载:4/0  |  提交时间:2017/12/03
Low-Frequency Noise in High-Mobility a-InGaZnO/InSnO Nanowire Composite Thin-Film Transistors 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017, 卷号: 38, 页码: 1540-1542
作者:  Wan, Da;  Abliz, Ablat;  Su, Meng;  Liu, Chuangsheng;  Jiang, Changzhong
收藏  |  浏览/下载:2/0  |  提交时间:2019/11/21
A comparison of density of states between InGaZnO based TFTs and InZnO based TFTs 期刊论文
MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2017, 卷号: 651, 页码: 221-227
作者:  Huang, Chuan-Xin[1];  Li, Jun[2];  Zhu, Wen-Qing[3];  Zhang, Jian-Hua[4];  Jiang, Xue-Yin[5]
收藏  |  浏览/下载:4/0  |  提交时间:2019/04/24
TiSiOx gate dielectrics produced by reactive sputtering for high performance InGaZnO thin film transistors 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017, 卷号: 61, 页码: 125-130
作者:  Fu, Yi-Zhou[1];  Li, Jun[2];  Zhao, Cheng-Yu[3];  Huang, Chuan-Xin[4];  Zhang, Jian-Hua[5]
收藏  |  浏览/下载:8/0  |  提交时间:2019/04/24


©版权所有 ©2017 CSpace - Powered by CSpace