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A study on repeatable and universal growth morphology optimization for nanowires grown on Si substrates 期刊论文
Vacuum, 2022, 卷号: 201
作者:  Wang, Xiaoye;  Bai, Xue;  Yang, Xiaoguang;  Du, Wenna;  Yang, Tao
收藏  |  浏览/下载：17/0  |  提交时间：2022/06/20
Effect of self-assembled InAs islands on the interfacial roughness of optical-switched resonant tunneling diode 期刊论文
NANOSCALE RESEARCH LETTERS, 2012, 卷号: 7, 页码: 1
Tian, HT; Wang, L; Shi, ZW; Gao, HJ; Zhang, SH; Wang, WX; Chen, H
收藏  |  浏览/下载：13/0  |  提交时间：2013/09/17
Dependence of the electrical and optical properties on growth interruption in alas/in0.53ga0.47as/inas resonant tunneling diodes 期刊论文
Nanoscale research letters, 2011, 卷号: 6, 期号: 1
作者:  Zhang,Yang;  Guan,Min;  Liu,Xingfang;  Zeng,Yiping
收藏  |  浏览/下载：27/0  |  提交时间：2019/05/12
Ordered inas nanodots formed on the patterned gaas substrate by molecular beam epitaxy 期刊论文
Materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 108-113
作者:  Jin, Lan;  Zhou, Huiying;  Qu, Shengchun;  Wang, Zhanguo
收藏  |  浏览/下载：99/0  |  提交时间：2019/05/12
Effects of ultra-low al alloying in(al) as layer on the formation and evolution of inas/gaas quantum dots 期刊论文
Journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: 6
作者:  Zhou, X. L.;  Chen, Y. H.;  Li, T. F.;  Zhou, G. Y.;  Zhang, H. Y.
收藏  |  浏览/下载：14/0  |  提交时间：2019/05/12
Carrier tunneling effects on the temperature dependent photoluminescence of inas/gaas quantum dot: simulation and experiment 期刊论文
Journal of applied physics, 2011, 卷号: 109, 期号: 8, 页码: 7
作者:  Zhou, X. L.;  Chen, Y. H.;  Zhang, H. Y.;  Zhou, G. Y.;  Li, T. F.
收藏  |  浏览/下载：16/0  |  提交时间：2019/05/12
Study of molecular-beam epitaxy growth on patterned gaas (1 0 0) substrates by masked indium ion implantation 期刊论文
Journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575
作者:  Zhou, Huiying;  Qu, Shengchun;  Jin, Peng;  Xu, Bo;  Ye, Xiaoling
收藏  |  浏览/下载：39/0  |  提交时间：2019/05/12
Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy 期刊论文
materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 108-113
Jin, L; Zhou, HY; Qu, SC; Wang, ZG
收藏  |  浏览/下载：91/0  |  提交时间：2012/02/06
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311
作者:  Xu B;  Zhou GY;  Ye XL;  Zhang HY
收藏  |  浏览/下载：53/5  |  提交时间：2011/07/05
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575
作者:  Xu B;  Jin P;  Ye XL
收藏  |  浏览/下载：63/1  |  提交时间：2011/07/05

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