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CORC

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Room-temperature plasmonic resonant absorption for grating-gate GaN HEMTs in far infrared terahertz domain 期刊论文
Opt Quant Electron, 2013, 卷号: 45, 期号: 7
作者:  W.D.Hu L.Wang X.S.Chen N.Guo J.S.Miao A.Q.Yu W.Lu
收藏  |  浏览/下载：16/0  |  提交时间：2014/11/10
A theoretical calculation of the impact of gan cap and alxga1-xn barrier thickness fluctuations on two-dimensional electron gas in a gan/alxga1-xn/gan heterostructure 期刊论文
Ieee transactions on electron devices, 2011, 卷号: 58, 期号: 12, 页码: 4272-4275
作者:  Liu, Guipeng;  Wu, Ju;  Lu, Yanwu;  Zhang, Biao;  Li, Chengming
收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12
An Analytical Compact Direct-Current and Capacitance Model for AlGaN/GaN High Electron Mobility Transistors 会议论文
ADVANCES IN GAN, GAAS, SIC AND RELATED ALLOYS ON SILICON SUBSTRATES, Symposium on Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates held at the 2008 Materials-Research-Society Meeting, San Francisco, CA, Web of Science
Li, Miao; Cheng, Xiaoxu; Wang, Yan
收藏  |  浏览/下载：4/0
High-performance 2 mm gate width ganhemts on 6h-sic with output power of 22.4 w @ 8 ghz 期刊论文
Solid-state electronics, 2008, 卷号: 52, 期号: 6, 页码: 926-929
作者:  Wang, X. L.;  Chen, T. S.;  Xiao, H. L.;  Wang, C. M.;  Hu, G. X.
收藏  |  浏览/下载：14/0  |  提交时间：2019/05/12
钝化前表面预处理对AlGaN/GaN HEMTs性能的影响 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 2, 页码: 5，329-333
作者:  李诚瞻;  刘丹;  郑英奎;  刘新宇;  刘键
收藏  |  浏览/下载：10/0  |  提交时间：2010/05/27
High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz 期刊论文
solid-state electronics, 2008, 卷号: 52, 期号: 6, 页码: 926-929
Wang, XL; Chen, TS; Xiao, HL; Wang, CM; Hu, GX; Luo, WJ; Tang, J; Guo, LC; Li, JM
收藏  |  浏览/下载：77/1  |  提交时间：2010/03/08
等离子体刻蚀凹栅槽影响AlGaN／GaNHEMT栅电流的机理 期刊论文
半 导 体 学 报, 2007, 卷号: 28, 期号: 11, 页码: 5,1777_1781
作者:  刘新宇;  李诚瞻;  庞磊;  黄俊;  刘键
收藏  |  浏览/下载：8/0  |  提交时间：2010/05/26
Influence of aln interfacial layer on electrical properties of high-al-content al0.45ga0.55n/gan hemt structure 期刊论文
Applied surface science, 2006, 卷号: 253, 期号: 2, 页码: 762-765
作者:  Wang, Cuimei;  Wang, Xiaoliang;  Hu, Guoxin;  Wang, Junxi;  Li, Jianping
收藏  |  浏览/下载：16/0  |  提交时间：2019/05/12
Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures 会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Wang, CM; Wang, XL; Hu, GX; Wang, JX; Li, JP
收藏  |  浏览/下载：119/30  |  提交时间：2010/03/29
Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure 期刊论文
applied surface science, 2006, 卷号: 253, 期号: 2, 页码: 762-765
Wang CM (Wang Cuimei); Wang XL (Wang Xiaoliang); Hu GX (Hu Guoxin); Wang JX (Wang Junxi); Li HP (Li Jianping); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载：31/0  |  提交时间：2010/04/11

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