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Investigation the Impact of Composition on the Performance of SiGe Nanowire pMOSFETs by Different Simulation Methods 其他
2016-01-01
Xianle Zhang; Xiaoyan Liu; Yijiao Wang; Longxiang Yin; Gang Du
收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03
Investigation of Hole Mobility in Strained InSb Ultrathin Body pMOSFETs 期刊论文
ieee电子器件汇刊, 2015
Chang, Pengying; Liu, Xiaoyan; Zeng, Lang; Wei, Kangliang; Du, Gang
收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10
A closed-form capacitance model for tunnel FETs with explicit surface potential solutions 期刊论文
应用物理杂志, 2014
Wang, Jiaxin; Wu, Chunlei; Huang, Qianqian; Wang, Chao; Huang, Ru
收藏  |  浏览/下载：5/0  |  提交时间：2015/11/10
Derivative Superposition Numerical Method for Double-Gate MOSFET Transistor Application to RF Mixer 期刊论文
journal of computational and theoretical nanoscience, 2014
Zhu, Haifeng; Huang, Shuai; Shi, Min; Zhang, Wei; Sun, Ling; He, Lin; Zhu, Xiaoan; Wang, Cheng; He, Xiaomeng; Liang, Hailang; He, Qingxing; Du, Caixia; He, Jin
收藏  |  浏览/下载：4/0  |  提交时间：2015/11/16
Simulation Study of Quasi-Ballistic Transport in Asymmetric DG-MOSFET by Directly Solving Boltzmann Transport Equation 其他
2013-01-01
Liu, Gai; Du, Gang; Lu, Tiao; Liu, Xiaoyan; Zhang, Pingwen; Zhang, Xing
收藏  |  浏览/下载：5/0  |  提交时间：2015/11/10
Total ionizing dose and single-event effect in vertical channel double-gate nMOSFETs 期刊论文
semiconductor science and technology, 2013
Tan, Fei; An, Xia; Xue, Shoubin; Huang, Liangxi; Wu, Weikang; Zhang, Xing; Huang, Ru
收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13
Numerical Electron Mobility Model of Nanoscale Symmetric, Asymmetric and Independent Double-Gate MOSFETs 期刊论文
journal of computational and theoretical nanoscience, 2013
He, Jin; Xu, Yiwen; Chen, Lin; Zhang, Lining; Zhou, Xingye; Ma, Chenyue; Cao, Yu; Ye, Yun; Wang, Cheng; Liang, Hailang; Chan, Mansun
收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13
Unified Scale Length for Four-Terminal Double-Gate MOSFETs 期刊论文
ieee电子器件汇刊, 2012
Zhou, Xingye; Liu, Feng; Zhang, Lining; Wang, Cheng; He, Jin; Zhang, Xing; Chan, Mansun
收藏  |  浏览/下载：2/0  |  提交时间：2015/11/10
An improvement to computational efficiency of the drain current model for double-gate MOSFET 期刊论文
chinese physics b, 2011
Zhou Xing-Ye; Zhang Jian; Zhou Zhi-Ze; Zhang Li-Ning; Ma Chen-Yue; Wu Wen; Zhao Wei; Zhang Xing
收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13
A continuous analytic channel potential solution to doped symmetric double-gate MOSFETs from the accumulation to the strong-inversion region 期刊论文
chinese physics b, 2011
He Jin; Liu Feng; Zhou Xing-Ye; Zhang Jian; Zhang Li-Ning
收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13

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