Total ionizing dose and single-event effect in vertical channel   double-gate nMOSFETs

doi:10.1088/0268-1242/28/5/055003

CORC > 北京大学 > 信息科学技术学院

	Total ionizing dose and single-event effect in vertical channel double-gate nMOSFETs
	Tan, Fei ; An, Xia ; Xue, Shoubin ; Huang, Liangxi ; Wu, Weikang ; Zhang, Xing ; Huang, Ru
刊名	semiconductor science and technology
	2013
关键词	DISPLACEMENT DAMAGE SILICON DEVICES CELL
DOI	10.1088/0268-1242/28/5/055003
英文摘要	In this paper, the total ionizing dose (TID) and single-event effect (SEE) in vertical channel double-gate (DG) nMOSFETs are comprehensively investigated. Due to the vertical channel structure and the excellent gate control capability, the vertical channel DG transistor is relatively resistant to TID and transient ionization effect. However, the dc characteristics of vertical channel DG device are very sensitive to permanent damage induced by a few ions hitting the device. The on-state current and transconductance of the vertical channel DG MOSFETs show significant degradation after exposure to heavy ions, which is attributed to the formation of displacement damage in the channel. As the device feature size scales down to the deca-nanometer regime, the influence of permanent damage induced by a few ions striking the device static performance cannot be ignored and should be seriously considered in radiation-hardened technologies.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000317746100006&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter; SCI(E); EI; 0; ARTICLE; 5; 28
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/291753]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Tan, Fei,An, Xia,Xue, Shoubin,et al. Total ionizing dose and single-event effect in vertical channel double-gate nMOSFETs[J]. semiconductor science and technology,2013.
APA	Tan, Fei.,An, Xia.,Xue, Shoubin.,Huang, Liangxi.,Wu, Weikang.,...&Huang, Ru.(2013).Total ionizing dose and single-event effect in vertical channel double-gate nMOSFETs.semiconductor science and technology.
MLA	Tan, Fei,et al."Total ionizing dose and single-event effect in vertical channel double-gate nMOSFETs".semiconductor science and technology (2013).