CORC

在结果中检索

CORC

浏览/检索结果: 共128条，第1-10条 帮助

已选(0)清除 条数/页：   排序方式：
Large-area transfer of two-dimensional materials free of cracks, contamination and wrinkles via controllable conformal contact 期刊论文
NATURE COMMUNICATIONS, 2022, 卷号: 13, 期号: 1, 页码: 10
作者:  Zhao, Yixuan;  Song, Yuqing;  Hu, Zhaoning;  Wang, Wendong;  Chang, Zhenghua
收藏  |  浏览/下载：42/0  |  提交时间：2022/09/16
Etendue enhancement for light emitting diode subpixels 专利
专利号: US20190088820A1, 申请日期: 2019-03-21, 公开日期: 2019-03-21
作者:  DANESH, FARIBA;  LEUNG, BENJAMIN;  LAU, TSUN;  TEZCAN, ZULAL;  TSAI, MIAO-CHAN
收藏  |  浏览/下载：26/0  |  提交时间：2019/12/30
GaAs Nanowires Grown by Catalyst Epitaxy for High Performance Photovoltaics 期刊论文
CRYSTALS, 2018, 卷号: 8, 期号: 9, 页码: 21
作者:  Wang, Ying;  Zhou, Xinyuan;  Yang, Zaixing;  Wang, Fengyun;  Han, Ning
收藏  |  浏览/下载：39/0  |  提交时间：2018/12/04
n-VO2/p-GaN based nitride-oxide heterostructure with various thickness of VO2 layer grown by MBE 期刊论文
APPLIED SURFACE SCIENCE, 2016, 卷号: 389, 页码: 199-204
作者:  Wang, Minhuan;  Bian, Jiming;  Sun, Hongjun;  Liu, Weifeng;  Zhang, Yuzhi
收藏  |  浏览/下载：25/0  |  提交时间：2017/02/24
Integrated high-performance infrared phototransistor arrays composed of nonlayered pbs-mos2 heterostructures with edge contacts 期刊论文
Nano letters, 2016, 卷号: 16, 期号: 10, 页码: 6437-6444
作者:  Wen, Yao;  Yin, Lei;  He, Peng;  Wank, Zhenxing;  Zhang, XianKun
收藏  |  浏览/下载：33/0  |  提交时间：2019/05/09
Electrical characterization of Cu Schottky contacts to n-type GaAsN grown on (311)A/B GaAs substrates 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 657, 页码: 325-329
作者:  Dong C(董琛);  Han XX(韩修训);  Gao, Xin;  Yoshio Ohshita;  Masafumi Yamaguchi
收藏  |  浏览/下载：17/0  |  提交时间：2015/12/30
Crystal Phase- and Orientation-Dependent Electrical Transport Properties of InAs Nanowires 期刊论文
NANO LETTERS, 2016
Fu, Mengqi; Tang, Zhiqiang; Li, Xing; Ning, Zhiyuan; Pan, Dong; Zhao, Jianhua; Wei, Xianlong; Chen, Qing
收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03
Schottky barrier heights at the interfaces between pure-phase InAs nanowires and metal contacts 期刊论文
JOURNAL OF APPLIED PHYSICS, 2016
Feng, Boyong; Huang, Shaoyun; Wang, Jiyin; Pan, Dong; Zhao, Jianghua; Xu, H. Q.
收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03
N+/P shallow junction with high dopant activation and low contact resistivity fabricated by solid phase epitaxy method for Ge technology 其他
2015-01-01
Liu, Pengqiang; Li, Ming; An, Xia; Lin, Meng; Zhao, Yang; Zhang, Bingxin; Xia, Xuyuan; Huang, Ru
收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03
N+/P Shallow Junction with High Dopant Activation and Low Contact Resistivity Fabricated by Solid Phase Epitaxy Method for Ge Technology 其他
2015-01-01
Liu, Pengqiang; Li, Ming; An, Xia; Lin, Meng; Zhao, Yang; Zhang, Bingxin; Xia, Xuyuan; Huang, Ru
收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03

©版权所有 ©2017 CSpace - Powered by CSpace