Schottky barrier heights at the interfaces between pure-phase InAs   nanowires and metal contacts

doi:10.1063/1.4941391

CORC > 北京大学 > 信息科学技术学院

	Schottky barrier heights at the interfaces between pure-phase InAs nanowires and metal contacts
	Feng, Boyong ; Huang, Shaoyun ; Wang, Jiyin ; Pan, Dong ; Zhao, Jianghua ; Xu, H. Q.
刊名	JOURNAL OF APPLIED PHYSICS
	2016
关键词	FIELD-EFFECT TRANSISTORS DIAMETER
DOI	10.1063/1.4941391
英文摘要	Understanding of the Schottky barriers formed at metal contact-InAs nanowire interfaces is of great importance for the development of high-performance InAs nanowire nanoelectronic and quantum devices. Here, we report a systematical study of InAs nanowire field-effect transistors (FETs) and the Schottky barrier heights formed at the contact-nanowire interfaces. The InAs nanowires employed are grown by molecular beam epitaxy and are high material quality single crystals, and the devices are made by directly contacting the nanowires with a series of metals of different work functions. The fabricated InAs nanowire FET devices are characterized by electrical measurements at different temperatures and the Schottky barrier heights are extracted from the measured temperature and gate-voltage dependences of the channel current. We show that although the work functions of the contact metals are widely spread, the Schottky barrier heights are determined to be distributed over 35-55 meV, showing a weak but not negligible dependence on the metals. The deduced Fermi level in the InAs nanowire channels is found to be in the band gap and very close to the conduction band. The physical origin of the results is discussed in terms of Fermi level pinning by the surface states of the InAs nanowires and a shift in pinned Fermi level induced by the metal-related interface states. (C) 2016 AIP Publishing LLC.; National Basic Research Program of China [2012CB932700, 2012CB932703]; National Natural Science Foundation of China [91221202, 91421303, 11274021, 61321001]; Specialized Research Fund for the Doctoral Program of Higher Education of China [20120001120127]; Swedish Research Council (VR); SCI(E); EI; ARTICLE; syhuang@pku.edu.cn; hqxu@pku.edu.cn; 5; 119
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/437697]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Feng, Boyong,Huang, Shaoyun,Wang, Jiyin,et al. Schottky barrier heights at the interfaces between pure-phase InAs nanowires and metal contacts[J]. JOURNAL OF APPLIED PHYSICS,2016.
APA	Feng, Boyong,Huang, Shaoyun,Wang, Jiyin,Pan, Dong,Zhao, Jianghua,&Xu, H. Q..(2016).Schottky barrier heights at the interfaces between pure-phase InAs nanowires and metal contacts.JOURNAL OF APPLIED PHYSICS.
MLA	Feng, Boyong,et al."Schottky barrier heights at the interfaces between pure-phase InAs nanowires and metal contacts".JOURNAL OF APPLIED PHYSICS (2016).